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FDS5170N7 PDF预览

FDS5170N7

更新时间: 2024-09-26 22:34:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 201K
描述
60V N-Channel PowerTrench MOSFET

FDS5170N7 数据手册

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May 2003  
FDS5170N7  
60V N-Channel PowerTrench MOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers. It has been optimized for  
“low side” synchronous rectifier operation, providing an  
extremely low RDS(ON) in a small package.  
10.6 A, 60 V. RDS(ON) = 12 m@ VGS = 10 V  
RDS(ON) = 15 m@ VGS = 6.0 V  
High performance trench technology for extremely  
low RDS(ON)  
Applications  
High power and current handling capability  
Fast switching, low gate charge (51nC typical)  
Synchronous rectifier  
DC/DC converter  
FLMP SO-8 package: Enhanced thermal  
performance in industry-standard package size  
Bottom-side  
Drain Contact  
5
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
60  
± 20  
V
V
A
VGSS  
Gate-Source Voltage  
ID  
Drain Current – Continuous  
– Pulsed  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1a)  
10.6  
50  
3.0  
PD  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
40  
0.5  
RθJA  
RθJC  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS5170N7  
FDS5170N7  
13’’  
12mm  
2500 units  
FDS5170N7 Rev C1(W)  
2002 Fairchild Semiconductor Corporation  

FDS5170N7 替代型号

型号 品牌 替代类型 描述 数据表
FDMS5672 FAIRCHILD

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N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mohm

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