5秒后页面跳转
FDS4935BZ PDF预览

FDS4935BZ

更新时间: 2024-09-27 04:18:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 154K
描述
Dual 30 Volt P-Channel PowerTrench MOSFET

FDS4935BZ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.42
Samacsys Description:MOSFET 30V PCH DUAL POWER TRENCH M其他特性:ESD PROTECTION
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):6.9 A最大漏极电流 (ID):6.9 A
最大漏源导通电阻:0.022 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.6 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

FDS4935BZ 数据手册

 浏览型号FDS4935BZ的Datasheet PDF文件第2页浏览型号FDS4935BZ的Datasheet PDF文件第3页浏览型号FDS4935BZ的Datasheet PDF文件第4页浏览型号FDS4935BZ的Datasheet PDF文件第5页 
September 2006  
tm  
FDS4935BZ  
Dual 30 Volt P-Channel PowerTrench MOSFET  
“
General Description  
Features  
This P-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers, and battery chargers.  
x –6.9 A, –30 V. RDS(ON) = 22 m: @ VGS = –10 V  
RDS(ON) = 35 m: @ VGS = – 4.5 V  
x Extended VGSS range (–25V) for battery applications  
x ESD protection diode (note 3)  
These MOSFETs feature faster switching and lower  
gate charge than other MOSFETs with comparable  
RDS(ON) specifications.  
x High performance trench technology for extremely  
low RDS(ON)  
The result is a MOSFET that is easy and safer to drive  
(even at very high frequencies), and DC/DC power  
supply designs with higher overall efficiency.  
x High power and current handling capability  
D1  
5
6
7
8
4
3
2
1
D1  
D2  
Q1  
Q2  
D2  
G1  
SO-8  
S1  
G2  
S2  
Pin 1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDS\  
Parameter  
Drain-Source Voltage  
Ratings  
–30  
Units  
V
VGS  
ID  
Gate-Source Voltage  
+25  
–6.9  
V
A
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
–50  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
1.6  
W
1.0  
(Note 1c)  
0.9  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
qC  
Thermal Characteristics  
RTJA  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
78  
40  
qC/W  
qC/W  
Thermal Resistance, Junction-to-Case  
RTJC  
Package Marking and Ordering Information  
Reel Size  
Device Marking  
Device  
Tape width  
Quantity  
FDS4935BZ  
FDS4935BZ  
13’’  
12mm  
2500 units  
FDS4935BZ Rev B1 (W)  
”2006 Fairchild Semiconductor Corporation  

FDS4935BZ 替代型号

型号 品牌 替代类型 描述 数据表
NDS8947 FAIRCHILD

类似代替

Dual P-Channel Enhancement Mode Field Effect Transistor
FDS4935 FAIRCHILD

类似代替

Dual 30V P-Channel PowerTrench MOSFET
FDS4935BZ ONSEMI

功能相似

双 P 沟道,PowerTrench® MOSFET,- 30V,-6.9A,22mΩ

与FDS4935BZ相关器件

型号 品牌 获取价格 描述 数据表
FDS4935D84Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Meta
FDS4935F011 FAIRCHILD

获取价格

Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Meta
FDS4935L86Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Meta
FDS4935L99Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Meta
FDS4935S62Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Meta
FDS4953 FAIRCHILD

获取价格

Dual P-Channel, Logic Level, PowerTrenchTM MOSFET
FDS4953 MICROSEMI

获取价格

EVALUATION KIT
FDS4953_02 FAIRCHILD

获取价格

Dual 30V P-Channel PowerTrench MOSFET
FDS4953_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, 5A I(D), 30V, 0.055ohm, 2-Element, P-Channel, Silicon, Meta
FDS4953D84Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 5A I(D), 30V, 0.053ohm, 2-Element, P-Channel, Silicon, Meta