是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 12 weeks | 风险等级: | 0.94 |
最大漏极电流 (Abs) (ID): | 6.1 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 端子数量: | 8 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
最大功率耗散 (Abs): | 2 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FDS6690AS | ONSEMI |
类似代替 ![]() |
N 沟道,PowerTrench® SyncFET™,30V,10A,12mΩ |
![]() |
NTMS4920NR2G | ONSEMI |
类似代替 ![]() |
Power MOSFET 30 V, 17 A, N−Channel, SO−8 |
![]() |
FDS6690AS | FAIRCHILD |
功能相似 ![]() |
30V N-Channel PowerTrench SyncFET |
![]() |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS4897C | FAIRCHILD |
获取价格 |
Dual N & P-Channel PowerTrench MOSFET |
![]() |
FDS4897C | ONSEMI |
获取价格 |
双 N 和 P 沟道,PowerTrench® MOSFET,40V |
![]() |
FDS4935 | FAIRCHILD |
获取价格 |
Dual 30V P-Channel PowerTrench MOSFET |
![]() |
FDS4935_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Meta |
![]() |
FDS4935A | FAIRCHILD |
获取价格 |
Dual 30V P-Channel PowerTrench MOSFET |
![]() |
FDS4935A | ONSEMI |
获取价格 |
双 P 沟道,PowerTrench® MOSFET,- 30V,-7A,23mΩ |
![]() |
FDS4935A_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Meta |
![]() |
FDS4935BZ | FAIRCHILD |
获取价格 |
Dual 30 Volt P-Channel PowerTrench MOSFET |
![]() |
FDS4935BZ | ONSEMI |
获取价格 |
双 P 沟道,PowerTrench® MOSFET,- 30V,-6.9A,22mΩ |
![]() |
FDS4935D84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Meta |
![]() |