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FDMC7692S-F125 PDF预览

FDMC7692S-F125

更新时间: 2024-11-18 14:50:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 218K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

FDMC7692S-F125 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):18 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):27 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

FDMC7692S-F125 数据手册

 浏览型号FDMC7692S-F125的Datasheet PDF文件第2页浏览型号FDMC7692S-F125的Datasheet PDF文件第3页浏览型号FDMC7692S-F125的Datasheet PDF文件第4页浏览型号FDMC7692S-F125的Datasheet PDF文件第5页浏览型号FDMC7692S-F125的Datasheet PDF文件第6页浏览型号FDMC7692S-F125的Datasheet PDF文件第7页 
June 2010  
FDMC7692S  
N-Channel Power Trench® SyncFETTM  
30 V, 12.5 A, 9.3 m:  
Features  
General Description  
This FDMC7692S is produced using Fairchild Semiconductor’s  
advanced Power Trench® process that has been especially  
tailored to minimize the on-state resistance. This device is well  
suited for Power Management and load switching applications  
common in Notebook Computers and Portable Battery packs.  
„ Max rDS(on) = 9.3 m: at VGS = 10 V, ID = 12.5 A  
„ Max rDS(on) = 13.6 m: at VGS = 4.5 V, ID = 10.4 A  
„ High performance technology for extremely low rDS(on)  
„ Termination is Lead-free and RoHS Compliant  
Applications  
„ DC - DC Buck Converters  
„ Notebook DC - DC application  
Bottom  
Top  
G
S
S
S
D
D
D
D
5
6
7
8
4
3
Pin 1  
G
S
S
S
2
1
D
D
D
D
MLP 3.3x3.3  
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
30  
V
V
20  
Drain Current -Continuous (Package limited)  
-Continuous  
TC = 25 °C  
TA = 25 °C  
18  
ID  
(Note 1a)  
(Note 3)  
12.5  
A
-Pulsed  
45  
EAS  
Sinlge Pulse Avalanche Energy  
Power Dissipation  
21  
27  
mJ  
W
TC = 25 °C  
TA = 25 °C  
PD  
Power Dissipation  
(Note 1a)  
2.3  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RTJC  
RTJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
4.7  
53  
°C/W  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13 ’’  
Tape Width  
12 mm  
Quantity  
FDMC7692S  
FDMC7692S  
MLP 3.3X3.3  
3000 units  
1
©2010 Fairchild Semiconductor Corporation  
FDMC7692S Rev.C2  
www.fairchildsemi.com  

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