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FDMC8010ET30 PDF预览

FDMC8010ET30

更新时间: 2024-11-10 11:15:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 573K
描述
N 沟道,PowerTrench® MOSFET,30V,174A,1.3mΩ

FDMC8010ET30 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, S-PDSO-N5Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:20 weeks风险等级:0.98
雪崩能效等级(Eas):153 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:174 V
最大漏极电流 (Abs) (ID):174 A最大漏极电流 (ID):174 A
最大漏源导通电阻:0.0013 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):250 pFJESD-30 代码:S-PDSO-N5
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):65 W
最大脉冲漏极电流 (IDM):835 A表面贴装:YES
端子面层:Tin (Sn)端子形式:NO LEAD
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):75 ns
最大开启时间(吨):42 nsBase Number Matches:1

FDMC8010ET30 数据手册

 浏览型号FDMC8010ET30的Datasheet PDF文件第2页浏览型号FDMC8010ET30的Datasheet PDF文件第3页浏览型号FDMC8010ET30的Datasheet PDF文件第4页浏览型号FDMC8010ET30的Datasheet PDF文件第5页浏览型号FDMC8010ET30的Datasheet PDF文件第6页浏览型号FDMC8010ET30的Datasheet PDF文件第7页 
FDMC8010ET30  
MOSFET – N-Channel,  
POWERTRENCH)  
30 V, 174 A, 1.3 mW  
General Description  
www.onsemi.com  
This NChannel MOSFET is produced using ON Semiconductor’s  
advanced POWERTRENCH process that has been especially tailored  
to minimize the onstate resistance. This device is well suited for  
Pin 1  
Pin 1  
S
S
S
G
applications where ultra low r  
is required in small spaces such as  
DS(on)  
High performance VRM, POL and Oring functions.  
D
D
D
D
Features  
Top  
Bottom  
Extended T Rating to 175°C  
J
PQFN8 3.3x3.3, 0.65P  
CASE 483AW  
Power 33  
Max r  
Max r  
= 1.3 mW at V = 10 V, I = 30 A  
GS D  
DS(on)  
= 1.8 mW at V = 4.5 V, I = 25 A  
DS(on)  
GS  
D
High Performance Technology for Extremely Low r  
These Devices are PbFree and are RoHS Compliant  
DS(on)  
MARKING DIAGRAM  
Applications  
DC DC Buck Converters  
Point of Load  
High Efficiency Load Switch and Low Side Switching  
Oring FET  
$Y&Z&3&K  
FDMC  
8010ET  
MOSFET MAXIMUM RATINGS (T = 25°C Unless Otherwise Noted)  
A
Symbol  
VDS  
Parameter  
Drain to Source Voltage  
Ratings Units  
$Y  
&Z  
&3  
&K  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Numeric Date Code  
= Lot Code  
30  
20  
V
V
A
VGS  
Gate to Source Volage (Note 4)  
Drain Current  
ID  
FDMC8010ET  
= Specific Device Code  
Continuous  
Continuous  
Continuous  
Pulsed  
TC = 25°C (Note 6)  
174  
123  
30  
TC = 100°C (Note 6)  
TA = 25°C (Note 1a)  
(Note 5)  
835  
EAS  
PD  
Single Pulse Avalance Energy (Note 3)  
Power Dissipation TC = 25°C  
153  
65  
mJ  
W
S
S
D
D
Power Dissipation TA = 25°C (Note 1a)  
2.8  
TJ, TSTG Operating and Storage Junction Temperature  
Range  
55 to  
°C  
S
D
D
+150  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
G
THERMAL CHARACTERISTICS  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 2 of this data sheet.  
Symbol  
RθJC  
Parameter  
Ratings  
1.3  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Case  
RθJA  
Thermal Resistance, Junction to Ambient  
(Note 1a)  
53  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
July, 2019 Rev. 2  
FDMC8010ET30/D  

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