Datasheet > FDMC7692S-F127

FDMC7692S-F127

更新时间： 2024-11-19 09:54:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	218K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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数据手册

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FDMC7692S-F127 数据手册

June 2010

FDMC7692S

N-Channel Power Trench^®SyncFET^TMꢀ

30 V, 12.5 A, 9.3 m:

Features

General Description

This FDMC7692S is produced using Fairchild Semiconductor’s

advanced Power Trench^®process that has been especially

tailored to minimize the on-state resistance. This device is well

suited for Power Management and load switching applications

common in Notebook Computers and Portable Battery packs.

Max r_DS(on)= 9.3 m: at V_GS= 10 V, I_D= 12.5 A

Max r_DS(on)= 13.6 m: at V_GS= 4.5 V, I_D= 10.4 A

High performance technology for extremely low r_DS(on)

Termination is Lead-free and RoHS Compliant

Applications

DC - DC Buck Converters

Notebook DC - DC application

Bottom

Top

Pin 1

MLP 3.3x3.3

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous (Package limited)

-Continuous

T_C= 25 °C

T_A= 25 °C

I_D

(Note 1a)

(Note 3)

12.5

-Pulsed

E_AS

Sinlge Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

(Note 1a)

2.3

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_TJC

R_TJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

4.7

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMC7692S

MLP 3.3X3.3

3000 units

FDMC7692S Rev.C2

www.fairchildsemi.com

12 3 4 5 6 7 8

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