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FDMC7678 PDF预览

FDMC7678

更新时间: 2024-11-30 19:52:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 270K
描述
Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN

FDMC7678 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:MLP
包装说明:SMALL OUTLINE, S-PDSO-N5针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.71
Samacsys Description:MOSFET PowerTrench N-Ch 30V 19.5A MLP其他特性:ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):54 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):19.5 A最大漏极电流 (ID):17.5 A
最大漏源导通电阻:0.0053 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MO-240BAJESD-30 代码:S-PDSO-N5
JESD-609代码:e4湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):31 W
最大脉冲漏极电流 (IDM):70 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDMC7678 数据手册

 浏览型号FDMC7678的Datasheet PDF文件第2页浏览型号FDMC7678的Datasheet PDF文件第3页浏览型号FDMC7678的Datasheet PDF文件第4页浏览型号FDMC7678的Datasheet PDF文件第5页浏览型号FDMC7678的Datasheet PDF文件第6页浏览型号FDMC7678的Datasheet PDF文件第7页 
November 2013  
FDMC7678  
N-Channel Power Trench® MOSFET  
30 V, 19.5 A, 5.3 mΩ  
Features  
General Description  
„ Max rDS(on) = 5.3 mΩ at VGS = 10 V, ID = 17.5 A  
„ Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15.0 A  
„ High performance technology for extremely low rDS(on)  
„ Termination is Lead-free and RoHS Compliant  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor’s advanced Power Trench® process that has  
been especially tailored to minimize the on-state resistance. This  
device is well suited for Power Management and load switching  
applications common in Notebook Computers and Portable  
Battery Packs.  
Application  
„ DC - DC Buck Converters  
„ Notebook battery power management  
„ Load switch in Notebook  
Bottom  
D D  
Top  
7
D
D
8
2
6
5
4
3
2
1
G
S
S
S
D
D
D
D
5
6
7
8
G S  
S
Pin 1  
S
1
3
4
MLP 3.3x3.3  
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
30  
±20  
V
V
(Note 3)  
Drain Current -Continuous (Package limited) TC = 25 °C  
19.5  
63  
Drain Current -Continuous (Silicon limited)  
-Continuous  
TC = 25 °C  
ID  
A
TA = 25 °C  
(Note 1a)  
(Note 4)  
17.5  
70  
-Pulsed  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
54  
mJ  
W
TC = 25 °C  
TA = 25 °C  
31  
PD  
Power Dissipation  
(Note 1a)  
2.3  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
4.0  
53  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13 ’’  
Tape Width  
12 mm  
Quantity  
FDMC7678  
FDMC7678  
MLP 3.3x3.3  
3000 units  
©2011 Fairchild Semiconductor Corporation  
FDMC7678 Rev. C2  
www.fairchildsemi.com  
1

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