是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | MLP |
包装说明: | SMALL OUTLINE, S-PDSO-N5 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.71 |
Samacsys Description: | MOSFET PowerTrench N-Ch 30V 19.5A MLP | 其他特性: | ULTRA-LOW RESISTANCE |
雪崩能效等级(Eas): | 54 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 19.5 A | 最大漏极电流 (ID): | 17.5 A |
最大漏源导通电阻: | 0.0053 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MO-240BA | JESD-30 代码: | S-PDSO-N5 |
JESD-609代码: | e4 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 5 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 31 W |
最大脉冲漏极电流 (IDM): | 70 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | NO LEAD |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDMC7680 | FAIRCHILD |
获取价格 |
N-Channel Power Trench® MOSFET 30 V, 14.8 A, |
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FDMC7680 | ONSEMI |
获取价格 |
N 沟道,Power Trench® MOSFET,30V,14.8A,7.2mΩ |
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FDMC7692 | FAIRCHILD |
获取价格 |
N-Channel Power Trench® MOSFET 30 V, 13.3 A, |
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FDMC7692 | ONSEMI |
获取价格 |
N 沟道 PowerTrench® MOSFET 30V,13.3A,8.5mΩ |
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FDMC7692_10 | FAIRCHILD |
获取价格 |
N-Channel Power Trench® MOSFET |
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FDMC7692S | FAIRCHILD |
获取价格 |
N-Channel Power Trench? SyncFETTM |
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FDMC7692S | ONSEMI |
获取价格 |
N 沟道,Power Trench® SyncFET™,30V,18A,9.3mΩ |
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FDMC7692S-F125 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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FDMC7692S-F126 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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FDMC7692S-F127 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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