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FDD5N60NZTM PDF预览

FDD5N60NZTM

更新时间： 2024-11-19 11:12:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
10页 741K
描述
功率 MOSFET，N 沟道，UniFETTM II，600V，4A，2Ω，DPAK

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中文翻译

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FDD5N60NZTM 技术参数

是否无铅：不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：4 weeks风险等级：0.7
Is Samacsys：N雪崩能效等级（Eas）：216 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：600 V最大漏极电流 (Abs) (ID)：4 A
最大漏极电流 (ID)：4 A最大漏源导通电阻：2 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：83 W最大脉冲漏极电流 (IDM)：16 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDD5N60NZTM 数据手册

 浏览型号FDD5N60NZTM的Datasheet PDF文件第2页浏览型号FDD5N60NZTM的Datasheet PDF文件第3页浏览型号FDD5N60NZTM的Datasheet PDF文件第4页浏览型号FDD5N60NZTM的Datasheet PDF文件第5页浏览型号FDD5N60NZTM的Datasheet PDF文件第6页浏览型号FDD5N60NZTM的Datasheet PDF文件第7页 
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
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device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please  
email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
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中文翻译

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FDD5N60NZTM 替代型号

型号 品牌 替代类型 描述 数据表
NDD04N60ZT4G ONSEMI

类似代替

 N-Channel Power MOSFET 600 V, 2.0 Ohm
NDD04N60Z-1G ONSEMI

功能相似

 N-Channel Power MOSFET 1.8 , 600 Volts

与FDD5N60NZTM相关器件

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FDD6030 FAIRCHILD

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 		N-Channel PowerTrenchTM MOSFET
FDD6030BL FAIRCHILD

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 		30V N-Channel PowerTrench MOSFET
FDD6030BL_NL FAIRCHILD

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 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDD6030L FAIRCHILD

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 		N-Channel Logic Level Enhancement Mode Field Effect Transistor
FDD6030L ONSEMI

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 		N 沟道，PowerTrench® MOSFET，30V，12A，14.5mΩ
FDD6030L_03 FAIRCHILD

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 		30V N-Channel PowerTrench MOSFET
FDD6030L_NL FAIRCHILD

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 		Power Field-Effect Transistor, 50A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me
FDD6030L-NF080 FAIRCHILD

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 		Transistor
FDD6035 FAIRCHILD

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 		N-Channel, Logic Level, PowerTrench MOSFET
FDD6035AL FAIRCHILD

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 		N-Channel, Logic Level, PowerTrench MOSFET

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