Datasheet > FDD6030L-NF080

FDD6030L-NF080

更新时间： 2024-11-21 20:06:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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6页	117K
描述
Transistor

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技术参数
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FDD6030L-NF080 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

FDD6030L-NF080 数据手册

August 2003

FDD6030L

30V N-Channel PowerTrench^ÒMOSFET

General Description

Features

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench process that

has been especially tailored to minimize the on state

resistance and yet maintain low gate charge for

superior switching performance.

12 A, 30 V

R_DS(ON)= 14.5 mW @ V_GS= 10 V

R_DS(ON)= 21 mW @ V_GS= 4.5 V

Low gate charge

Fast Switching Speed

Applications

DC/DC converter

Motor Drives

High performance trench technology for extremely

low R_DS(ON)

D-PAK

TO-252

(TO-252)

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

Continuous Drain Current @T_C=25°C

@T_A=25°C

±20

I_D

(Note 3)

(Note 1a)

(Note 3)

100

Pulsed

P_D

Power Dissipation

@T_C=25°C

@T_A=25°C

(Note 1a)

(Note 1b)

3.2

1.5

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

(Note 1)

(Note 1a)

(Note 1b)

2.7

R_qJC

R_qJA

°C/W

Thermal Resistance, Junction-to-Ambient

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape width

12mm

Quantity

2500 units

FDD6030L

D-PAK (TO-252)

13’’

FDD6030L Rev E

Ó2003 Fairchild Semiconductor Corporation

12 3 4 5 6

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