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FDD6030L-NF080 PDF预览

FDD6030L-NF080

更新时间: 2024-11-06 20:06:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 117K
描述
Transistor

FDD6030L-NF080 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

FDD6030L-NF080 数据手册

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August 2003  
FDD6030L  
30V N-Channel PowerTrenchÒ MOSFET  
General Description  
Features  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor’s advanced PowerTrench process that  
has been especially tailored to minimize the on state  
resistance and yet maintain low gate charge for  
superior switching performance.  
·
12 A, 30 V  
RDS(ON) = 14.5 mW @ VGS = 10 V  
RDS(ON) = 21 mW @ VGS = 4.5 V  
·
·
·
Low gate charge  
Fast Switching Speed  
Applications  
·
·
DC/DC converter  
Motor Drives  
High performance trench technology for extremely  
low RDS(ON)  
D
D
G
G
S
D-PAK  
(TO-252)  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
30  
V
V
A
VGSS  
Gate-Source Voltage  
Continuous Drain Current @TC=25°C  
@TA=25°C  
±20  
ID  
(Note 3)  
(Note 1a)  
(Note 1a)  
(Note 3)  
50  
12  
100  
Pulsed  
PD  
W
Power Dissipation  
@TC=25°C  
@TA=25°C  
@TA=25°C  
56  
(Note 1a)  
(Note 1b)  
3.2  
1.5  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +175  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Case  
(Note 1)  
(Note 1a)  
(Note 1b)  
2.7  
45  
96  
RqJC  
RqJA  
RqJA  
°C/W  
Thermal Resistance, Junction-to-Ambient  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape width  
12mm  
Quantity  
2500 units  
FDD6030L  
FDD6030L  
D-PAK (TO-252)  
13’’  
FDD6030L Rev E  
Ó2003 Fairchild Semiconductor Corporation  

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