Datasheet > NDD04N60Z-1G

NDD04N60Z-1G

更新时间： 2024-11-02 05:52:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	148K
描述
N-Channel Power MOSFET 1.8 , 600 Volts

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中文翻译

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数据手册
替代型号

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NDD04N60Z-1G 数据手册

NDF04N60Z, NDP04N60Z,

NDD04N60Z

N-Channel Power MOSFET

1.8 W, 600 Volts

Features

http://onsemi.com

• Low ON Resistance

• Low Gate Charge

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

(TYP) @ 2 A

DS(ON)

DSS

600 V

1.8 Ω

Applications

• Adapter (Notebook, Printer, Gaming)

• LCD Panel Power

• Lighting Ballasts

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

NDF

600 (Note 1)

4.0 (Note 2)

NDD/NDP Unit

Drain−to−Source Voltage

Continuous Drain Current

DSS

DPAK

TO−220FP TO−220AB

CASE 221D CASE 221A CASE 369D

STYLE 1 STYLE 5

STYLE 2

IPAK

2.7 (Note 2)

CASE 369AA

STYLE 2

T = 100°C

Pulsed Drain Current, V @ 10V

14 (Note 2)

Power Dissipation (Note 1)

Gate−to−Source Voltage

MARKING DIAGRAMS

Drain

Single Pulse Avalanche Energy,

L = 6.4 mH, I = 4.0 A

ESD (HBM) (JESD 22−114−B)

2500

esd

RMS Isolation Voltage (t = 0.3

ISO

4500

−

NDF04N60ZG

sec., R.H. ≤ 30%, T = 25°C)

(Figure 13)

NDP04N60ZG

AYWW

Peak Diode Recovery

dv/dt

4.5 (Note 3)

4.0

V/ns

Gate

Source

Continuous Source Current

(Body Diode)

Gate Drain Source

Drain

Maximum Temperature for

Soldering Leads, 0.063″

(1.6 mm) from Case for 10 s

Package Body for 10 s

300

260

°C

PKG

Drain

Operating Junction and

Storage Temperature Range

T , T

−55 to 150

°C

stg

Drain

Gate Source

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= Location Code

= Year

= Work Week

= Pb−Free Package

1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu

2. Limited by maximum junction temperature

3. I = 4.0 A, di/dt ≤ 100 A/ms, V ≤ BV

, T = +150°C

DSS

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Publication Order Number:

June, 2009 − Rev. 0

NDF04N60Z/D

12 3 4 5 6 7 8

中文翻译

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NDD04N60Z-1G 替代型号

型号	品牌	替代类型	描述	数据表
FDD5N60NZTM	ONSEMI	功能相似	功率 MOSFET，N 沟道，UniFETTM II，600V，4A，2Ω，DPAK
NDD04N60ZT4G	ONSEMI	功能相似	N-Channel Power MOSFET 600 V, 2.0 Ohm

与NDD04N60Z-1G相关器件

型号	品牌	获取价格	描述	数据表
NDD04N60ZG	ONSEMI	获取价格	N-Channel Power MOSFET 1.8 , 600 Volts
NDD04N60ZT4G	ONSEMI	获取价格	N-Channel Power MOSFET 600 V, 2.0 Ohm
NDD04N62Z	ONSEMI	获取价格	N-Channel Power MOSFET 620 V, 1.8
NDD04N62Z-1G	ONSEMI	获取价格	N-Channel Power MOSFET 620 V, 1.8
NDD04N62ZT4G	ONSEMI	获取价格	N-Channel Power MOSFET 620 V, 1.8
NDD05N50Z	ONSEMI	获取价格	N-Channel Power MOSFET 500 V, 1.25 Ω
NDD05N50Z-1G	ONSEMI	获取价格	N-Channel Power MOSFET 500 V, 1.25 Ω
NDD05N50ZT4G	ONSEMI	获取价格	N-Channel Power MOSFET 500 V, 1.25 Ω
NDD406A	NSC	获取价格	TRANSISTOR 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, FET General Purpose
NDD406A/L86Z	TI	获取价格	15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

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