生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.82 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 18 A |
最大漏源导通电阻: | 0.06 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 72 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDD506BEL | TI |
获取价格 |
18A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | |
NDD506BEL/L86Z | TI |
获取价格 |
18A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | |
NDD506BL | TI |
获取价格 |
18A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | |
NDD506BL/L86Z | TI |
获取价格 |
18A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | |
NDD60N360U1 | ONSEMI |
获取价格 |
N-Channel Power MOSFET | |
NDD60N360U1-1G | ONSEMI |
获取价格 |
N-Channel Power MOSFET | |
NDD60N360U1-35G | ONSEMI |
获取价格 |
N-Channel Power MOSFET | |
NDD60N360U1T4G | ONSEMI |
获取价格 |
N-Channel Power MOSFET | |
NDD60N550U1 | ONSEMI |
获取价格 |
N-Channel Power MOSFET | |
NDD60N550U1-1G | ONSEMI |
获取价格 |
N-Channel Power MOSFET |