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NDD04N60ZT4G PDF预览

NDD04N60ZT4G

更新时间: 2024-11-02 12:01:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管脉冲PC
页数 文件大小 规格书
9页 140K
描述
N-Channel Power MOSFET 600 V, 2.0 Ohm

NDD04N60ZT4G 技术参数

是否无铅:不含铅生命周期:End Of Life
包装说明:HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 369AA-01, DPAK-3针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.38Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:226541
Samacsys Pin Count:4Samacsys Part Category:Transistor
Samacsys Package Category:TO-XXX (Inc. DPAK)Samacsys Footprint Name:DPAK
Samacsys Released Date:2016-01-25 14:39:57Is Samacsys:N
雪崩能效等级(Eas):120 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):4.1 A最大漏极电流 (ID):2.6 A
最大漏源导通电阻:2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):83 W最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

NDD04N60ZT4G 数据手册

 浏览型号NDD04N60ZT4G的Datasheet PDF文件第2页浏览型号NDD04N60ZT4G的Datasheet PDF文件第3页浏览型号NDD04N60ZT4G的Datasheet PDF文件第4页浏览型号NDD04N60ZT4G的Datasheet PDF文件第5页浏览型号NDD04N60ZT4G的Datasheet PDF文件第6页浏览型号NDD04N60ZT4G的Datasheet PDF文件第7页 
NDF04N60Z, NDD04N60Z  
N-Channel Power MOSFET  
600 V, 2.0 W  
Features  
Low ON Resistance  
Low Gate Charge  
http://onsemi.com  
ESD DiodeProtected Gate  
100% Avalanche Tested  
V
DSS  
(@ T  
)
R (MAX) @ 2 A  
DS(on)  
Jmax  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
650 V  
2.0 Ω  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
NChannel  
Parameter  
DraintoSource Voltage  
Continuous Drain Current R  
Symbol NDF  
NDD Unit  
D (2)  
V
DSS  
600  
V
(Note 1)  
I
I
4.8  
3.0  
4.1  
2.6  
A
A
q
JC  
D
Continuous Drain Current R , T =  
q
D
JC  
A
100°C (Note 1)  
G (1)  
Pulsed Drain Current,  
I
20  
30  
20  
83  
A
DM  
V
GS  
@ 10V  
Power Dissipation R  
P
W
V
q
JC  
D
S (3)  
GatetoSource Voltage  
V
30  
GS  
Single Pulse Avalanche Energy, I = 4.0  
E
AS  
120  
mJ  
D
A
ESD (HBM) (JESD22A114)  
RMS Isolation Voltage  
V
3000  
V
V
esd  
V
ISO  
4500  
(t = 0.3 sec., R.H. 30%, T = 25°C)  
A
(Figure 15)  
Peak Diode Recovery (Note 2)  
MOSFET dV/dt  
dV/dt  
dV/dt  
4.5  
60  
V/ns  
V/ns  
A
1
2
1
2
Continuous Source Current  
(Body Diode)  
I
S
4.0  
3
3
NDF04N60ZG  
TO220FP  
CASE 221D  
NDF04N60ZH  
TO220FP  
CASE 221AH  
Maximum Temperature for Soldering  
Leads  
T
L
260  
°C  
°C  
Operating Junction and  
Storage Temperature Range  
T , T  
55 to 150  
J
stg  
4
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
4
2
1
1
2
3
1. Limited by maximum junction temperature  
3
2. I = 4.0 A, di/dt 100 A/ms, V BV  
, T = +150°C  
J
SD  
DD  
DSS  
NDD04N60ZT4G  
DPAK  
CASE 369AA  
NDD04N60Z1G  
IPAK  
CASE 369D  
ORDERING AND MARKING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 6 of this data sheet.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
June, 2013 Rev. 8  
NDF04N60Z/D  
 

NDD04N60ZT4G 替代型号

型号 品牌 替代类型 描述 数据表
FDD5N60NZTM ONSEMI

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功率 MOSFET,N 沟道,UniFETTM II,600V,4A,2Ω,DPAK
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