Datasheet > NDD05N50Z

NDD05N50Z

更新时间： 2024-09-27 05:52:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	158K
描述
N-Channel Power MOSFET 500 V, 1.25 Ω

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NDD05N50Z 数据手册

NDF05N50Z, NDP05N50Z,

NDD05N50Z

N-Channel Power MOSFET

500 V, 1.25 W

Features

http://onsemi.com

• Low ON Resistance

• Low Gate Charge

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

(TYP) @ 2.2 A

DS(on)

DSS

500 V

1.25 W

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

NDF

NDP NDD Unit

N−Channel

D (2)

Drain−to−Source Voltage

Continuous Drain Current R

500

DSS

4.7

(Note 1)

Continuous Drain Current

3.2

(Note 1)

3.2

, T = 100°C

G (1)

Pulsed Drain Current, V

10 V

(Note 1)

Power Dissipation R

S (3)

Gate−to−Source Voltage

Single Pulse Avalanche Energy,

130

= 5.0 A

ESD (HBM) (JESD22−A114)

3000

esd

RMS Isolation Voltage (t =

ISO

4500

0.3 sec., R.H. ≤ 30%, T =

25°C) (Figure 15)

Peak Diode Recovery

dv/dt

4.5 (Note 2)

V/ns

Continuous Source Current

(Body Diode)

Maximum Temperature for

Soldering Leads, 0.063″

(1.6 mm) from Case for 10 s

Package Body for 10 s

PKG

300

260

°C

DPAK

TO−220FP TO−220AB

CASE 221D CASE 221ACASE 369D

STYLE 1 STYLE 5

STYLE 2

IPAK

CASE 369AA

STYLE 2

Operating Junction and

Storage Temperature Range

T , T

−55 to 150

°C

stg

MARKING AND ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Limited by maximum junction temperature

2. I = 4.4 A, di/dt ≤ 100 A/ms, V ≤ BV

, T = +150°C

DSS

Publication Order Number:

December, 2009 − Rev. 0

NDF05N50Z/D

12 3 4 5 6 7...9

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