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NDD60N360U1-1G PDF预览

NDD60N360U1-1G

更新时间: 2024-09-16 01:08:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 140K
描述
N-Channel Power MOSFET

NDD60N360U1-1G 数据手册

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NDD60N360U1  
N-Channel Power MOSFET  
600 V, 360 mW  
Features  
100% Avalanche Tested  
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS  
http://onsemi.com  
R
Compliant  
V
MAX  
DS(ON)  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
(BR)DSS  
J
Parameter  
DraintoSource Voltage  
GatetoSource Voltage  
Symbol  
NDD  
600  
25  
Unit  
V
600 V  
360 mW @ 10 V  
V
DSS  
V
GS  
V
NChannel MOSFET  
D (2)  
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
I
D
11  
A
C
q
JC  
T
C
= 100°C  
6.9  
114  
Power Dissipation –  
R
Steady  
State  
T
= 25°C  
P
D
W
A
C
q
JC  
G (1)  
Pulsed Drain  
Current  
t = 10 ms  
I
44  
p
DM  
S (3)  
Operating Junction and Storage  
Temperature  
T ,  
STG  
55 to  
+150  
°C  
J
T
Source Current (Body Diode)  
I
13  
64  
A
S
4
Single Pulse DraintoSource Avalanche  
EAS  
mJ  
Energy (I = 3.5 A)  
D
RMS Isolation Voltage (t = 0.3 sec.,  
V
ISO  
V
1
R.H. 30%, T = 25°C) (Figure 15)  
2
A
3
Peak Diode Recovery (Note 1)  
15  
V/ns  
dv/dt  
IPAK  
CASE 369D  
Lead Temperature for Soldering Leads  
T
L
260  
°C  
4
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
4
1. I 13 A, di/dt 400 A/ms, V  
V  
, V = 80% V  
SD  
DS peak  
(BR)DSS DD (BR)DSS  
2
1
1
3
3
DPAK  
CASE 369C  
2
THERMAL RESISTANCE  
Parameter  
IPAK  
CASE 369AD  
Symbol  
Value  
Unit  
°C/W  
°C/W  
JunctiontoCase (Drain)  
R
R
1.1  
q
JC  
JA  
JunctiontoAmbient Steady State  
q
(Note 3)  
(Note 2)  
(Note 2)  
NDD60N360U1  
NDD60N360U11  
NDD60N360U135G  
47  
98  
95  
MARKING AND ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
2. Insertion mounted  
3. Surface mounted on FR4 board using 1sq. pad size  
(Cu area = 1.127 in sq [2 oz] including traces)  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
January, 2014 Rev. 0  
NDD60N360U1/D  
 

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