Datasheet > NDD60N550U1-1G

NDD60N550U1-1G

更新时间： 2024-11-26 01:08:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	139K
描述
N-Channel Power MOSFET

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NDD60N550U1-1G 数据手册

NDD60N550U1

N-Channel Power MOSFET

600 V, 550 mW

Features

• 100% Avalanche Tested

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

http://onsemi.com

Compliant

MAX

DS(ON)

(BR)DSS

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

600 V

550 mW @ 10 V

Parameter

Drain−to−Source Voltage

Symbol

NDD

600

Unit

DSS

N−Channel MOSFET

D (2)

Gate−to−Source Voltage

Continuous Drain

Current R

Steady

State

8.2

25°C

5.2

100°C

G (1)

Power Dissipation –

Steady

State

25°C

S (3)

Pulsed Drain Current

t = 10 ms

Operating Junction and Storage

Temperature

T ,

STG

−55 to

°C

+150

Source Current (Body Diode)

8.2

Single Pulse Drain−to−Source Avalanche

EAS

Energy (I = 4 A)

Peak Diode Recovery (Note 1)

dv/dt

V/ns

IPAK

DPAK

CASE 369D

STYLE 2

CASE 369C

STYLE 2

Lead Temperature for Soldering Leads

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. I < 8.2 A, di/dt ≤ 400 A/ms, V

≤ V

, V = 80% V

(BR)DSS DD (BR)DSS

DS peak

IPAK

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

°C/W

CASE 369AD

STYLE 2

Junction−to−Case (Drain)

NDD60N550U1

1.3

Junction−to−Ambient Steady State

(Note 3)

(Note 2)

NDD60N550U1

MARKING AND ORDERING INFORMATION

See detailed ordering and shipping information on page 3 of

this data sheet.

NDD60N550U1−1

NDD60N550U1−35

2. Insertion mounted

3. Surface mounted on FR4 board using 1″ sq. pad size

(Cu area = 1.127 in sq [2 oz] including traces)

Publication Order Number:

December, 2013 − Rev. 0

NDD60N550U1/D

12 3 4 5 6 7 8

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