Datasheet > NDD60N745U1-1G

NDD60N745U1-1G

更新时间： 2024-11-03 01:07:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	139K
描述
N-Channel Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NDD60N745U1-1G 数据手册

NDD60N745U1

N-Channel Power MOSFET

600 V, 745 mW

Features

• 100% Avalanche Tested

http://onsemi.com

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX

DS(ON)

(BR)DSS

600 V

745 mW @ 10 V

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

600

Unit

N−Channel MOSFET

DSS

D (2)

Continuous Drain

Current R

Steady

State

= 25°C

6.6

= 100°C

4.2

G (1)

Power Dissipation

– R

Steady

State

= 25°C

S (3)

Pulsed Drain

Current

t = 10 ms

Operating Junction and Storage

Temperature

T ,

STG

−55 to

+150

°C

Source Current (Body Diode)

6.6

Single Pulse Drain−to−Source Avalanche

EAS

Energy (I = 2.5 A)

IPAK

DPAK

CASE 369C

STYLE 2

Peak Diode Recovery (Note 1)

dv/dt

V/ns

CASE 369D

STYLE 2

Lead Temperature for Soldering Leads

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. I < 6.6 A, di/dt ≤ 400 A/ms, V

≤ V

, V = 80% V

(BR)DSS DD (BR)DSS

DS peak

IPAK

CASE 369AD

STYLE 2

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

°C/W

Junction−to−Case (Drain)

NDD60N745U1

1.5

Junction−to−Ambient Steady State

ORDERING INFORMATION

See detailed ordering and shipping information on page 3 of

this data sheet.

(Note 3)

(Note 2)

NDD60N745U1

NDD60N745U1−1

NDD60N745U1−35

2. Insertion mounted

3. Surface mounted on FR4 board using 1″ sq. pad size

(Cu area = 1.127 in sq [2 oz] including traces)

Publication Order Number:

December, 2013 − Rev. 0

NDD60N745U1/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与NDD60N745U1-1G相关器件

型号	品牌	获取价格	描述	数据表
NDD60N745U1-35G	ONSEMI	获取价格	N-Channel Power MOSFET
NDD60N745U1T4G	ONSEMI	获取价格	N-Channel Power MOSFET
NDD60N900U1	ONSEMI	获取价格	N-Channel Power MOSFET
NDD60N900U1-1G	ONSEMI	获取价格	N-Channel Power MOSFET
NDD60N900U1-35G	ONSEMI	获取价格	N-Channel Power MOSFET
NDD60N900U1T4G	ONSEMI	获取价格	N-Channel Power MOSFET
NDDB102M	TAIYO YUDEN	获取价格	General Purpose Inductor, 1000uH, 1 Element, SMD
NDDL01N60Z-1G	ONSEMI	获取价格	功率 MOSFET，600V，0.8A，15Ω，单 N 沟道，DPAK
NDDL01N60ZT4G	ONSEMI	获取价格	功率 MOSFET，600V，0.8A，15Ω，单 N 沟道，DPAK
NDDL1N60Z	ONSEMI	获取价格	N-Channel Power MOSFET