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NDD60N745U1-35G PDF预览

NDD60N745U1-35G

更新时间: 2024-11-03 01:07:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 139K
描述
N-Channel Power MOSFET

NDD60N745U1-35G 数据手册

 浏览型号NDD60N745U1-35G的Datasheet PDF文件第2页浏览型号NDD60N745U1-35G的Datasheet PDF文件第3页浏览型号NDD60N745U1-35G的Datasheet PDF文件第4页浏览型号NDD60N745U1-35G的Datasheet PDF文件第5页浏览型号NDD60N745U1-35G的Datasheet PDF文件第6页浏览型号NDD60N745U1-35G的Datasheet PDF文件第7页 
NDD60N745U1  
N-Channel Power MOSFET  
600 V, 745 mW  
Features  
100% Avalanche Tested  
http://onsemi.com  
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS  
Compliant  
V
R
MAX  
DS(ON)  
(BR)DSS  
600 V  
745 mW @ 10 V  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
GatetoSource Voltage  
Symbol  
Value  
600  
25  
Unit  
V
NChannel MOSFET  
V
DSS  
D (2)  
V
GS  
V
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
I
D
6.6  
A
C
q
JC  
T
C
= 100°C  
4.2  
G (1)  
Power Dissipation  
– R  
Steady  
State  
T
= 25°C  
P
84  
W
A
C
D
q
JC  
S (3)  
Pulsed Drain  
Current  
t = 10 ms  
I
27  
p
DM  
4
Operating Junction and Storage  
Temperature  
T ,  
STG  
55 to  
+150  
°C  
J
4
T
Source Current (Body Diode)  
I
6.6  
38  
A
S
2
1
1
3
Single Pulse DraintoSource Avalanche  
EAS  
mJ  
2
3
Energy (I = 2.5 A)  
D
IPAK  
DPAK  
CASE 369C  
STYLE 2  
Peak Diode Recovery (Note 1)  
dv/dt  
15  
V/ns  
CASE 369D  
STYLE 2  
Lead Temperature for Soldering Leads  
T
260  
°C  
L
4
3
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. I < 6.6 A, di/dt 400 A/ms, V  
V  
, V = 80% V  
(BR)DSS DD (BR)DSS  
SD  
DS peak  
1
2
IPAK  
CASE 369AD  
STYLE 2  
THERMAL RESISTANCE  
Parameter  
Symbol  
Value  
Unit  
°C/W  
°C/W  
JunctiontoCase (Drain)  
NDD60N745U1  
R
1.5  
q
JC  
JunctiontoAmbient Steady State  
R
q
JA  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 3 of  
this data sheet.  
(Note 3)  
(Note 2)  
(Note 2)  
NDD60N745U1  
47  
98  
95  
NDD60N745U11  
NDD60N745U135  
2. Insertion mounted  
3. Surface mounted on FR4 board using 1sq. pad size  
(Cu area = 1.127 in sq [2 oz] including traces)  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
December, 2013 Rev. 0  
NDD60N745U1/D  
 

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