Datasheet > NDDL1N60Z

NDDL1N60Z

更新时间： 2024-11-03 01:13:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	113K
描述
N-Channel Power MOSFET

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NDDL1N60Z 数据手册

NDDL1N60Z, NDTL1N60Z

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N-Channel Power MOSFET

600 V, 15 W

Features

http://onsemi.com

• 100% Avalanche Tested

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

MAX

DS(ON)

(BR)DSS

Compliant

600 V

15 W @ 10 V

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

N−Channel MOSFET

D (2)

Parameter

Drain−to−Source Voltage

Continuous Drain Current R

Symbol

NDD

NDT

Unit

600

DSS

0.8

0.5

0.3

Steady State, T = 25°C (Note 1)

Continuous Drain Current R

Steady State, T = 100°C (Note 1)

0.15

G (1)

Pulsed Drain Current, t = 10 ms

3.2

1.0

Power Dissipation – R

S (3)

Steady State, T = 25°C

MARKING DIAGRAMS

Gate−to−Source Voltage

Single Pulse Drain−to−Source

EAS

Drain

Avalanche Energy (I = 1.0 A)

DPAK

CASE 369C

STYLE 2

Peak Diode Recovery (Note 2)

Source Current (Body Diode)

dv/dt

4.5

V/ns

0.5

0.3

Lead Temperature for Soldering

Leads

260

°C

Drain

Gate Source

Operating Junction and Storage

Temperature

T , T

−55 to +150

°C

STG

Drain

IPAK

CASE 369D

STYLE 2

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Limited by maximum junction temperature

2. I = 1.5 A, di/dt ≤ 100 A/ms, V ≤ BV

DSS

= Year

= Work Week

= Pb−Free Package

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

°C/W

Gate Drain Source

Junction−to−Case (Drain)

NDDL1N60Z

Drain

SOT−223

CASE 318E

STYLE 3

Junction−to−Ambient

(Note 4) NDDL1N60Z

(Note 3) NDDL1N60Z−1

(Note 4) NDTL1N60Z

(Note 5) NDTL1N60Z

151

AYW

L1N60ZG

= Assembly Location

= Year

= Work Week

3. Insertion mounted.

4. Surface−mounted on FR4 board using 1” sq. pad size

Gate Drain Source

(Cu area = 1.127” sq. [2 oz] including traces).

01N60 = Specific Device Code

5. Surface−mounted on FR4 board using minimum recommended pad size

= Pb−Free Package

(Cu area = 0.026” sq. [2 oz]).

(*Note: Microdot may be in either location)

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Publication Order Number:

May, 2013 − Rev. P1

NDDL1N60Z/D

12 3 4 5

中文翻译

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