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NDDL1N60ZT4G

更新时间: 2024-11-03 01:13:11
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安森美 - ONSEMI /
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5页 113K
描述
N-Channel Power MOSFET

NDDL1N60ZT4G 数据手册

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NDDL1N60Z, NDTL1N60Z  
Product Preview  
N-Channel Power MOSFET  
600 V, 15 W  
Features  
http://onsemi.com  
100% Avalanche Tested  
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS  
V
R
MAX  
DS(ON)  
(BR)DSS  
Compliant  
600 V  
15 W @ 10 V  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
NChannel MOSFET  
D (2)  
Parameter  
DraintoSource Voltage  
Continuous Drain Current R  
Symbol  
V
NDD  
NDT  
Unit  
V
600  
DSS  
I
D
0.8  
0.5  
0.3  
A
q
JC  
Steady State, T = 25°C (Note 1)  
C
Continuous Drain Current R  
Steady State, T = 100°C (Note 1)  
I
D
0.15  
A
q
JC  
G (1)  
C
Pulsed Drain Current, t = 10 ms  
I
3.2  
25  
1.0  
3
A
p
DM  
Power Dissipation – R  
P
W
q
D
JC  
S (3)  
Steady State, T = 25°C  
C
MARKING DIAGRAMS  
GatetoSource Voltage  
V
30  
60  
V
GS  
4
Single Pulse DraintoSource  
EAS  
mJ  
Drain  
Avalanche Energy (I = 1.0 A)  
PK  
4
DPAK  
CASE 369C  
STYLE 2  
Peak Diode Recovery (Note 2)  
Source Current (Body Diode)  
dv/dt  
4.5  
V/ns  
A
I
0.5  
0.3  
2
1
S
3
Lead Temperature for Soldering  
Leads  
T
260  
°C  
L
2
Drain  
1
3
Gate Source  
Operating Junction and Storage  
Temperature  
T , T  
55 to +150  
°C  
J
STG  
4
4
Drain  
IPAK  
CASE 369D  
STYLE 2  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Limited by maximum junction temperature  
1
2
3
2. I = 1.5 A, di/dt 100 A/ms, V BV  
S
DD  
DSS  
Y
= Year  
WW  
G
= Work Week  
= PbFree Package  
THERMAL RESISTANCE  
Parameter  
1
2
3
Symbol  
Value  
Unit  
°C/W  
°C/W  
Gate Drain Source  
JunctiontoCase (Drain)  
NDDL1N60Z  
R
R
5
q
Drain  
4
JC  
JA  
4
SOT223  
CASE 318E  
STYLE 3  
JunctiontoAmbient  
(Note 4) NDDL1N60Z  
(Note 3) NDDL1N60Z1  
(Note 4) NDTL1N60Z  
(Note 5) NDTL1N60Z  
50  
96  
62  
151  
q
AYW  
L1N60ZG  
G
1
2
3
A
Y
W
= Assembly Location  
= Year  
= Work Week  
3. Insertion mounted.  
1
2
3
4. Surfacemounted on FR4 board using 1” sq. pad size  
Gate Drain Source  
(Cu area = 1.127” sq. [2 oz] including traces).  
01N60 = Specific Device Code  
5. Surfacemounted on FR4 board using minimum recommended pad size  
G
= PbFree Package  
(Cu area = 0.026” sq. [2 oz]).  
(*Note: Microdot may be in either location)  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
May, 2013 Rev. P1  
NDDL1N60Z/D  
 

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