Datasheet > NDD60N900U1T4G

NDD60N900U1T4G

更新时间： 2024-11-22 01:07:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	138K
描述
N-Channel Power MOSFET

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中文翻译

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数据手册

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NDD60N900U1T4G 数据手册

NDD60N900U1

N-Channel Power MOSFET

600 V, 900 mW

Features

• 100% Avalanche Tested

http://onsemi.com

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX

DS(ON)

(BR)DSS

600 V

900 mW @ 10 V

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

600

Unit

N−Channel MOSFET

DSS

D (2)

Continuous Drain

Current R

Steady

State

= 25°C

5.7

= 100°C

3.6

G (1)

Power Dissipation

– R

Steady

State

= 25°C

Pulsed Drain

Current

t = 10 ms

S (3)

Operating Junction and Storage

Temperature

T ,

STG

−55 to

+150

°C

Source Current (Body Diode)

5.7

Single Pulse Drain−to−Source Avalanche

EAS

Energy (I = 2 A)

IPAK

CASE 369D

STYLE 2

DPAK

CASE 369C

STYLE 2

Peak Diode Recovery (Note 1)

dv/dt

V/ns

Lead Temperature for Soldering Leads

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. I < 5.7 A, di/dt ≤ 400 A/ms, V

< V

peak

(BR)DSS

THERMAL RESISTANCE

Parameter

IPAK

CASE 369AD

STYLE 2

Symbol

Value

Unit

°C/W

Junction−to−Case (Drain)

NDD60N900U1

1.7

Junction−to−Ambient Steady State

ORDERING INFORMATION

See detailed ordering and shipping information on page 3 of

this data sheet.

(Note 3)

(Note 2)

NDD60N900U1

NDD60N900U1−1

NDD60N900U1−35

2. Insertion mounted

3. Surface mounted on FR4 board using 1″ sq. pad size

(Cu area = 1.127 in sq [2 oz] including traces)

Publication Order Number:

December, 2013 − Rev. 0

NDD60N900U1/D

12 3 4 5 6 7 8

中文翻译

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