NDD60N900U1
N-Channel Power MOSFET
600 V, 900 mW
Features
• 100% Avalanche Tested
http://onsemi.com
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
DS(ON)
(BR)DSS
600 V
900 mW @ 10 V
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
600
25
Unit
V
N−Channel MOSFET
V
DSS
D (2)
V
GS
V
Continuous Drain
Current R
Steady
State
T
= 25°C
I
D
5.7
A
C
q
JC
T
C
= 100°C
3.6
G (1)
Power Dissipation
– R
Steady
State
T
= 25°C
P
74
W
A
C
D
q
JC
Pulsed Drain
Current
t = 10 ms
I
20
S (3)
p
DM
Operating Junction and Storage
Temperature
T ,
STG
−55 to
+150
°C
J
4
T
4
Source Current (Body Diode)
I
5.7
33
A
S
2
1
1
Single Pulse Drain−to−Source Avalanche
EAS
mJ
3
2
Energy (I = 2 A)
3
D
IPAK
CASE 369D
STYLE 2
DPAK
CASE 369C
STYLE 2
Peak Diode Recovery (Note 1)
dv/dt
15
V/ns
Lead Temperature for Soldering Leads
T
L
260
°C
4
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. I < 5.7 A, di/dt ≤ 400 A/ms, V
< V
SD
peak
(BR)DSS
1
2
THERMAL RESISTANCE
Parameter
IPAK
CASE 369AD
STYLE 2
Symbol
Value
Unit
°C/W
°C/W
Junction−to−Case (Drain)
NDD60N900U1
R
1.7
q
JC
Junction−to−Ambient Steady State
R
q
JA
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
(Note 3)
(Note 2)
(Note 2)
NDD60N900U1
47
99
95
NDD60N900U1−1
NDD60N900U1−35
2. Insertion mounted
3. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127 in sq [2 oz] including traces)
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2013 − Rev. 0
NDD60N900U1/D