Datasheet > NDD60N360U1T4G

NDD60N360U1T4G

更新时间： 2024-11-03 01:08:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	140K
描述
N-Channel Power MOSFET

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数据手册
替代型号

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NDD60N360U1T4G 数据手册

NDD60N360U1

N-Channel Power MOSFET

600 V, 360 mW

Features

• 100% Avalanche Tested

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

http://onsemi.com

Compliant

MAX

DS(ON)

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

(BR)DSS

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

NDD

600

Unit

600 V

360 mW @ 10 V

DSS

N−Channel MOSFET

D (2)

Continuous Drain

Current R

Steady

State

= 25°C

= 100°C

6.9

114

Power Dissipation –

Steady

State

= 25°C

G (1)

Pulsed Drain

Current

t = 10 ms

S (3)

Operating Junction and Storage

Temperature

T ,

STG

−55 to

+150

°C

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

EAS

Energy (I = 3.5 A)

RMS Isolation Voltage (t = 0.3 sec.,

ISO

−

R.H. ≤ 30%, T = 25°C) (Figure 15)

Peak Diode Recovery (Note 1)

V/ns

dv/dt

IPAK

CASE 369D

Lead Temperature for Soldering Leads

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. I ≤ 13 A, di/dt ≤ 400 A/ms, V

≤ V

, V = 80% V

DS peak

(BR)DSS DD (BR)DSS

DPAK

CASE 369C

THERMAL RESISTANCE

Parameter

IPAK

CASE 369AD

Symbol

Value

Unit

°C/W

Junction−to−Case (Drain)

1.1

Junction−to−Ambient Steady State

(Note 3)

(Note 2)

NDD60N360U1

NDD60N360U1−1

NDD60N360U1−35G

MARKING AND ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

2. Insertion mounted

3. Surface mounted on FR4 board using 1″ sq. pad size

(Cu area = 1.127 in sq [2 oz] including traces)

Publication Order Number:

January, 2014 − Rev. 0

NDD60N360U1/D

12 3 4 5 6 7 8

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NDD60N360U1T4G 替代型号

型号	品牌	替代类型	描述	数据表
FCD380N60E	ONSEMI	类似代替	功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，10.

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