Datasheet > NDD05N50ZT4G

NDD05N50ZT4G

更新时间： 2024-11-18 05:52:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	158K
描述
N-Channel Power MOSFET 500 V, 1.25 Ω

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NDD05N50ZT4G 数据手册

NDF05N50Z, NDP05N50Z,

NDD05N50Z

N-Channel Power MOSFET

500 V, 1.25 W

Features

http://onsemi.com

• Low ON Resistance

• Low Gate Charge

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

(TYP) @ 2.2 A

DS(on)

DSS

500 V

1.25 W

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

NDF

NDP NDD Unit

N−Channel

D (2)

Drain−to−Source Voltage

Continuous Drain Current R

500

DSS

4.7

(Note 1)

Continuous Drain Current

3.2

(Note 1)

3.2

, T = 100°C

G (1)

Pulsed Drain Current, V

10 V

(Note 1)

Power Dissipation R

S (3)

Gate−to−Source Voltage

Single Pulse Avalanche Energy,

130

= 5.0 A

ESD (HBM) (JESD22−A114)

3000

esd

RMS Isolation Voltage (t =

ISO

4500

0.3 sec., R.H. ≤ 30%, T =

25°C) (Figure 15)

Peak Diode Recovery

dv/dt

4.5 (Note 2)

V/ns

Continuous Source Current

(Body Diode)

Maximum Temperature for

Soldering Leads, 0.063″

(1.6 mm) from Case for 10 s

Package Body for 10 s

PKG

300

260

°C

DPAK

TO−220FP TO−220AB

CASE 221D CASE 221ACASE 369D

STYLE 1 STYLE 5

STYLE 2

IPAK

CASE 369AA

STYLE 2

Operating Junction and

Storage Temperature Range

T , T

−55 to 150

°C

stg

MARKING AND ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Limited by maximum junction temperature

2. I = 4.4 A, di/dt ≤ 100 A/ms, V ≤ BV

, T = +150°C

DSS

Publication Order Number:

December, 2009 − Rev. 0

NDF05N50Z/D

12 3 4 5 6 7...9

中文翻译

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NDD05N50ZT4G 替代型号

型号	品牌	替代类型	描述	数据表
NDD05N50Z-1G	ONSEMI	完全替代	N-Channel Power MOSFET 500 V, 1.25 Ω
FDPF5N50NZ	FAIRCHILD	功能相似	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
NDF05N50ZG	ONSEMI	功能相似	N-Channel Power MOSFET 500 V, 1.25 Ω

与NDD05N50ZT4G相关器件

型号	品牌	获取价格	描述	数据表
NDD406A	NSC	获取价格	TRANSISTOR 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, FET General Purpose
NDD406A/L86Z	TI	获取价格	15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
NDD406AE/L86Z	TI	获取价格	15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
NDD406AEL	TI	获取价格	15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
NDD406AEL/L86Z	TI	获取价格	15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
NDD406AL	TI	获取价格	TRANSISTOR 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, FET General Purpose
NDD406AL/L86Z	TI	获取价格	15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
NDD406B	TI	获取价格	12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
NDD406BE	TI	获取价格	12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
NDD406BE/L86Z	TI	获取价格	12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

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