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NDD05N50ZT4G

更新时间: 2024-11-02 05:52:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
9页 158K
描述
N-Channel Power MOSFET 500 V, 1.25 Ω

NDD05N50ZT4G 数据手册

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NDF05N50Z, NDP05N50Z,  
NDD05N50Z  
N-Channel Power MOSFET  
500 V, 1.25 W  
Features  
http://onsemi.com  
Low ON Resistance  
Low Gate Charge  
100% Avalanche Tested  
These Devices are PbFree and are RoHS Compliant  
V
R
(TYP) @ 2.2 A  
DS(on)  
DSS  
500 V  
1.25 W  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
V
NDF  
NDP NDD Unit  
NChannel  
D (2)  
DraintoSource Voltage  
Continuous Drain Current R  
500  
V
A
DSS  
I
D
5
5
4.7  
3
q
JC  
(Note 1)  
Continuous Drain Current  
I
D
3.2  
(Note 1)  
3.2  
20  
96  
A
A
R
q
JC  
, T = 100°C  
A
G (1)  
Pulsed Drain Current, V  
10 V  
@
I
20  
(Note 1)  
19  
83  
GS  
DM  
Power Dissipation R  
P
D
28  
W
V
q
JC  
S (3)  
GatetoSource Voltage  
V
GS  
30  
Single Pulse Avalanche Energy,  
D
E
AS  
130  
mJ  
I
= 5.0 A  
ESD (HBM) (JESD22A114)  
V
3000  
V
V
esd  
RMS Isolation Voltage (t =  
V
ISO  
4500  
0.3 sec., R.H. 30%, T =  
4
A
25°C) (Figure 15)  
4
Peak Diode Recovery  
dv/dt  
4.5 (Note 2)  
5
V/ns  
A
Continuous Source Current  
(Body Diode)  
I
S
2
1
1
1
2
1
2
3
2
3
3
3
Maximum Temperature for  
Soldering Leads, 0.063″  
(1.6 mm) from Case for 10 s  
Package Body for 10 s  
T
PKG  
300  
260  
°C  
L
DPAK  
TO220FP TO220AB  
CASE 221D CASE 221ACASE 369D  
STYLE 1 STYLE 5  
STYLE 2  
IPAK  
T
CASE 369AA  
STYLE 2  
Operating Junction and  
Storage Temperature Range  
T , T  
55 to 150  
°C  
J
stg  
MARKING AND ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Limited by maximum junction temperature  
2. I = 4.4 A, di/dt 100 A/ms, V BV  
, T = +150°C  
J
S
DD  
DSS  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
December, 2009 Rev. 0  
NDF05N50Z/D  
 

NDD05N50ZT4G 替代型号

型号 品牌 替代类型 描述 数据表
NDD05N50Z-1G ONSEMI

完全替代

N-Channel Power MOSFET 500 V, 1.25 Ω
FDPF5N50NZ FAIRCHILD

功能相似

Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
NDF05N50ZG ONSEMI

功能相似

N-Channel Power MOSFET 500 V, 1.25 Ω

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