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NDD04N60ZG

更新时间： 2024-11-21 05:52:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 148K
描述
N-Channel Power MOSFET 1.8 , 600 Volts

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NDD04N60ZG 数据手册

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NDF04N60Z, NDP04N60Z,  
NDD04N60Z  
N-Channel Power MOSFET  
1.8 W, 600 Volts  
Features  
http://onsemi.com  
• Low ON Resistance  
• Low Gate Charge  
• 100% Avalanche Tested  
• These Devices are Pb−Free and are RoHS Compliant  
V
R
(TYP) @ 2 A  
DS(ON)  
DSS  
600 V  
1.8 Ω  
Applications  
• Adapter (Notebook, Printer, Gaming)  
• LCD Panel Power  
• Lighting Ballasts  
4
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
4
Rating  
Symbol  
NDF  
600 (Note 1)  
4.0 (Note 2)  
NDD/NDP Unit  
Drain−to−Source Voltage  
Continuous Drain Current  
Continuous Drain Current  
V
DSS  
V
A
A
2
1
1
1
1
2
2
3
2
I
I
D
3
3
3
DPAK  
TO−220FP TO−220AB  
CASE 221D CASE 221A CASE 369D  
STYLE 1 STYLE 5  
STYLE 2  
IPAK  
2.7 (Note 2)  
D
CASE 369AA  
STYLE 2  
T = 100°C  
A
Pulsed Drain Current, V @ 10V  
I
14 (Note 2)  
A
W
V
GS  
DM  
Power Dissipation (Note 1)  
Gate−to−Source Voltage  
P
28  
95  
D
MARKING DIAGRAMS  
V
30  
51  
GS  
4
Drain  
Single Pulse Avalanche Energy,  
E
mJ  
AS  
L = 6.4 mH, I = 4.0 A  
D
ESD (HBM) (JESD 22−114−B)  
V
2500  
V
V
esd  
RMS Isolation Voltage (t = 0.3  
V
ISO  
4500  
−
NDF04N60ZG  
sec., R.H. ≤ 30%, T = 25°C)  
or  
A
(Figure 13)  
NDP04N60ZG  
AYWW  
Peak Diode Recovery  
dv/dt  
4.5 (Note 3)  
4.0  
V/ns  
A
Gate  
Source  
1
2
3
Continuous Source Current  
(Body Diode)  
I
S
4
Gate Drain Source  
Drain  
Maximum Temperature for  
Soldering Leads, 0.063″  
(1.6 mm) from Case for 10 s  
Package Body for 10 s  
T
300  
260  
°C  
L
T
PKG  
Drain  
2
Operating Junction and  
Storage Temperature Range  
T , T  
−55 to 150  
°C  
J
stg  
Drain  
1
3
Gate Source  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
A
Y
WW  
G
= Location Code  
= Year  
= Work Week  
= Pb−Free Package  
1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu  
2. Limited by maximum junction temperature  
3. I = 4.0 A, di/dt ≤ 100 A/ms, V ≤ BV  
, T = +150°C  
J
SD  
DD  
DSS  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
June, 2009 − Rev. 0  
NDF04N60Z/D  
 
12345678

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