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FDD6030 PDF预览

FDD6030

更新时间: 2024-11-17 22:40:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 110K
描述
N-Channel PowerTrenchTM MOSFET

FDD6030 数据手册

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April 1999  
ADVANCE INFORMATION  
FDD6030BL  
N-Channel PowerTrenchTM MOSFET  
General Description  
Features  
This N-Channel Logic level MOSFET is produced using  
Fairchild Semiconductor's advanced PowerTrench process  
that has been especially tailored to minimize the on-  
state resistance and yet maintain low gate charge for  
superior switching performance.  
35 A, 30 V. RDS(ON) = 0.018 @ VGS = 10 V  
RDS(ON) = 0.025 @ VGS = 4.5 V.  
Low gate charge.  
Fast switching speed.  
Applications  
High performance trench technology for extremely  
low RDS(ON)  
.
DC/DC converter  
Motor drives  
D
D
G
G
S
S
TO-252  
TC=25oC unless otherwise noted  
Absolute Maximum Ratings  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
30  
VGSS  
ID  
Gate-Source Voltage  
20  
V
A
±
(Note 1)  
Maximum Drain Current -Continuous  
35  
(Note 1a)  
9
100  
Maximum Drain Current -Pulsed  
Maximum Power Dissipation @ TC = 25oC  
TA = 25oC  
(Note 1)  
(Note 1a)  
(Note 1b)  
PD  
44  
W
2.8  
TA = 25oC  
1.3  
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
Thermal Characteristics  
θ
(Note 1)  
R
Thermal Resistance, Junction-to- Case  
2.8  
96  
C/W  
C/W  
JC  
°
°
(Note 1b)  
R
Thermal Resistance, Junction-to- Ambient  
JA  
θ
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDD6030BL  
FDD6030BL  
13’’  
16mm  
2500  
FDD6030BL Rev. A  
1999 Fairchild Semiconductor Corporation  

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