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FDD6030BL_NL

更新时间： 2024-11-20 13:07:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	110K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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FDD6030BL_NL 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	风险等级：	5.84
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	35 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e3	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	44 W	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

FDD6030BL_NL 数据手册

April 1999

ADVANCE INFORMATION

FDD6030BL

N-Channel PowerTrench^TMMOSFET

General Description

Features

This N-Channel Logic level MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench process

that has been especially tailored to minimize the on-

state resistance and yet maintain low gate charge for

superior switching performance.

• 35 A, 30 V. R_DS(ON)= 0.018 Ω @ V_GS= 10 V

R_DS(ON)= 0.025 Ω @ V_GS= 4.5 V.

• Low gate charge.

• Fast switching speed.

Applications

• High performance trench technology for extremely

low R_DS(ON)

• DC/DC converter

• Motor drives

TO-252

T_C=25^oC unless otherwise noted

Absolute Maximum Ratings

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

I_D

Gate-Source Voltage

(Note 1)

Maximum Drain Current -Continuous

(Note 1a)

100

Maximum Drain Current -Pulsed

Maximum Power Dissipation @ T_C= 25^oC

T_A= 25^oC

(Note 1)

(Note 1a)

(Note 1b)

P_D

2.8

T_A= 25^oC

1.3

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

(Note 1)

Thermal Resistance, Junction-to- Case

2.8

C/W

(Note 1b)

Thermal Resistance, Junction-to- Ambient

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDD6030BL

13’’

16mm

2500

FDD6030BL Rev. A

1999 Fairchild Semiconductor Corporation

12 3 4 5

中文翻译

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与FDD6030BL_NL相关器件

型号	品牌	获取价格	描述	数据表
FDD6030L	FAIRCHILD	获取价格	N-Channel Logic Level Enhancement Mode Field Effect Transistor
FDD6030L	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，30V，12A，14.5mΩ
FDD6030L_03	FAIRCHILD	获取价格	30V N-Channel PowerTrench MOSFET
FDD6030L_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 50A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me
FDD6030L-NF080	FAIRCHILD	获取价格	Transistor
FDD6035	FAIRCHILD	获取价格	N-Channel, Logic Level, PowerTrench MOSFET
FDD6035AL	FAIRCHILD	获取价格	N-Channel, Logic Level, PowerTrench MOSFET
FDD6035AL_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDD603AL	FAIRCHILD	获取价格	N-Channel Logic Level Enhancement Mode Field Effect Transistor
FDD6296	FAIRCHILD	获取价格	30V N-Channel Fast Switching PowerTrench? MOSFET