Datasheet > FDC604P_01

FDC604P_01

更新时间： 2024-09-14 04:18:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	91K
描述
P-Channel 1.8V Specified PowerTrench MOSFET

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FDC604P_01 数据手册

January 2001

FDC604P

P-Channel 1.8V Specified PowerTrench MOSFET

General Description

Features

This P-Channel 1.8V specified MOSFET uses

Fairchild’s low voltage PowerTrench process. It has

been optimized for battery power management

applications.

• –5.5 A, –20 V. R_DS(ON)= 33 mΩ @ V_GS= –4.5 V

R_DS(ON)= 43 mΩ @ V_GS= –2.5 V

_DS(ON)= 60 mΩ @ V_GS= –1.8 V

• Fast switching speed.

Applications

• High performance trench technology for extremely

• Battery management

• Load switch

low R_DS(ON)

• Battery protection

SuperSOT ^TM-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–20

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±8

–5.5

(Note 1a)

–20

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

0.8

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.604

FDC604P

7’’

8mm

3000 units

FDC604P Rev C (W)

2001 Fairchild Semiconductor Corporation

12 3 4 5

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