Datasheet > BSS123

BSS123

更新时间： 2024-11-17 21:53:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	145K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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中文翻译

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数据手册
替代型号

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BSS123 数据手册

June 2003

BSS123

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

General Description

These N-Channel enhancement mode field effect

transistors are produced using Fairchild’s proprietary,

high cell density, DMOS technology. These products

have been designed to minimize on-state resistance

while provide rugged, reliable, and fast switching

performance.These products are particularly suited for

low voltage, low current applications such as small

servo motor control, power MOSFET gate drivers, and

other switching applications.

0.17 A, 100 V. R_DS(ON)= 6W @ V_GS= 10 V

R_DS(ON)= 10W @ V_GS= 4.5 V

High density cell design for extremely low R_DS(ON)

Rugged and Reliable

Compact industry standard SOT-23 surface mount

package

SOT-23

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

100

Units

V_GSS

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±20

I_D

(Note 1)

0.17

0.68

Maximum Power Dissipation

Derate Above 25°C

0.36

P_D

mW/°C

2.8

T_J, T_STG

T_L

Operating and Storage Junction Temperature Range

- 55 to +150

°C

Maximum Lead Temperature for Soldering

Purposes, 1/16” from Case for 10 Seconds

300

350

Thermal Characteristics

R_qJA

Thermal Resistance, Junction-to-Ambient

(Note 1)

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

BSS123

7’’

8mm

3000 units

BSS123 Rev G(W)

Ó2003 Fairchild Semiconductor Corporation

12 3 4 5

中文翻译

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BSS123 替代型号

型号	品牌	替代类型	描述	数据表
MMBF170	FAIRCHILD	类似代替	N-Channel Enhancement Mode Field Effect Transistor
BSS123-7-F	DIODES	功能相似	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123LT1G	ONSEMI	功能相似	Power MOSFET 170 mAmps, 100 Volts

与BSS123相关器件

型号	品牌	获取价格	描述	数据表
BSS123(Z)	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
BSS123,215	NXP	获取价格	BSS123 - N-channel TrenchMOS logic level FET TO-236 3-Pin
BSS123/D87Z	TI	获取价格	170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
BSS123/L99Z	TI	获取价格	170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
BSS123/S62Z	TI	获取价格	170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
BSS123_08	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123_1	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123_10	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSS123_FAIRCHILD	FAIRCHILD	获取价格
BSS123-13-F	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, P-Channel, Silicon, Met