MMBF170

更新时间： 2024-09-27 22:46:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	78K
描述
N-Channel Enhancement Mode Field Effect Transistor

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替代型号

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MMBF170 数据手册

April 1995

BS170 / MMBF170

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

High density cell design for low R_DS(ON).

These

N-Channel enhancement mode field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. These products have been

designed to minimize on-state resistance while provide

rugged, reliable, and fast switching performance. They can

be used in most applications requiring up to 500mA DC.

These products are particularly suited for low voltage, low

current applications such as small servo motor control,

power MOSFET gate drivers, and other switching

applications.

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

_______________________________________________________________________________

Absolute Maximum Ratings

Symbol Parameter

T_A= 25°C unless otherwise noted

BS170

MMBF170

Units

Drain-Source Voltage

V_DSS

V_DGR

Drain-Gate Voltage (R_GS< 1MW)

Gate-Source Voltage

± 20

V_GSS

I_D

Drain Current - Continuous

- Pulsed

500

1200

830

6.6

500

800

300

2.4

P_D

Maximum Power Dissipation

Derate Above 25°C

mW/°C

°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to 150

300

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

°C

THERMAL CHARACTERISTICS

Thermal Resistacne, Junction-to-Ambient

150

417

°C/W

R_q_JA

BS170 Rev. C / MMBF170 Rev. D

12 3 4 5

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MMBF170 替代型号

型号	品牌	替代类型	描述	数据表
2N7002K	FAIRCHILD	类似代替	N-Channel Enhancement Mode Field Effect Transistor
BS170	FAIRCHILD	类似代替	N-Channel Enhancement Mode Field Effect Transistor
BSS123	FAIRCHILD	类似代替	N-Channel Logic Level Enhancement Mode Field Effect Transistor

与MMBF170相关器件

型号	品牌	获取价格	描述	数据表
MMBF170/D87Z	TI	获取价格	500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
MMBF170/L99Z	TI	获取价格	500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
MMBF170/S62Z	TI	获取价格	500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
MMBF170_08	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
MMBF170_1	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
MMBF170_NL	FAIRCHILD	获取价格	暂无描述
MMBF170-13-F	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
MMBF170-7	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
MMBF170-7-F	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
MMBF170D87Z	TI	获取价格	500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB