Datasheet > MMBF170_1

MMBF170_1

更新时间： 2024-02-01 13:47:33

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	71K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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数据手册

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MMBF170_1 数据手册

SPICE MODELS: MMBF170

MMBF170

Lead-free Green

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

Low On-Resistance

SOT-23

Low Gate Threshold Voltage

Low Input Capacitance

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

Fast Switching Speed

Low Input/Output Leakage

Lead Free/RoHS Compliant (Note 2)

TOP VIEW

Mechanical Data

Case: SOT-23

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Drain

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

Gate

Marking: (See Page 2) K6Z

All Dimensions in mm

Ordering & Date Code Information: See Page 2

Weight: 0.008 grams (approximate)

Source

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

V_DSS

MMBF170

Units

Drain-Source Voltage

V_DGR

Drain-Gate Voltage R_GS£ 1.0MW

Gate-Source Voltage

Continuous

Pulsed

±20

±40

V_GSS

I_D

500

800

Drain Current (Note 1)

Continuous

Pulsed

300

1.80

mW/°C

P_d

Total Power Dissipation (Note 1)

R_qJA

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

417

K/W

T_j, T_STG

-55 to +150

°C

Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,

which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

DS30104 Rev. 8 - 2

1 of 4

MMBF170

www.diodes.com

ã Diodes Incorporated

12 3 4

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