Datasheet > MMBF170G-AE2-R

MMBF170G-AE2-R

更新时间： 2024-02-19 19:28:57

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管场效应晶体管
页数	文件大小	规格书
2页	135K
描述
0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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MMBF170G-AE2-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

MMBF170

Preliminary

Power MOSFET

0.5A, 60V N-CHANNEL

ENHANCEMENT MODE FIELD

EFFECT TRANSISTOR

DESCRIPTION

The UTC MMBF170 is an N-channel enhancement MOSFET

using UTC’s advanced technology to provide the customers with

perfect R_DS(ON), low input capacitance, low gate threshold voltage

and high switching speed.

FEATURES

* R_DS(ON)<5mΩ @ V_GS=10V,I_D=0.2A

* High Switching Speed

* Low Input Capacitance(typical 22pF)

SYMBOL

3.Drain

2.Gate

1.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOT-23

Packing

Lead Free

Halogen Free

MMBF170G-AE2-R

MMBF170L-AE2-R

Tape Reel

Note: Pin Assignment: G: Gate D: Drain

S: Source

www.unisonic.com.tw

1 of 2

QW-R502-629.a

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MMBF170L	MOTOROLA	获取价格	500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-07, 3 PIN
MMBF170L99Z	TI	获取价格	500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
MMBF170-L99Z	TI	获取价格	500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
MMBF170L-AE2-R	UTC	获取价格	0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
MMBF170LT1	MOTOROLA	获取价格	TMOS FET Transistor
MMBF170LT1	ONSEMI	获取价格	Power MOSFET 500 mA, 60 V
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MMBF170LT1G	TYSEMI	获取价格	N-CHANNEL SOT-23
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