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MMBF2202PT1G PDF预览

MMBF2202PT1G

更新时间: 2024-02-11 08:37:52
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关光电二极管
页数 文件大小 规格书
4页 60K
描述
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323

MMBF2202PT1G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:SC-70包装说明:LEAD FREE, MINIATURE, CASE 419-04, SC-70, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.15配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):0.3 A
最大漏极电流 (ID):0.3 A最大漏源导通电阻:2.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MMBF2202PT1G 数据手册

 浏览型号MMBF2202PT1G的Datasheet PDF文件第2页浏览型号MMBF2202PT1G的Datasheet PDF文件第3页浏览型号MMBF2202PT1G的Datasheet PDF文件第4页 
MMBF2202PT1  
Preferred Device  
Power MOSFET  
300 mAmps, 20 Volts  
P−Channel SC−70/SOT−323  
These miniature surface mount MOSFETs low R  
assure  
DS(on)  
http://onsemi.com  
minimal power loss and conserve energy, making these devices ideal  
for use in small power management circuitry. Typical applications are  
dc−dc converters, power management in portable and  
battery−powered products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
300 mAMPS, 20 VOLTS  
RDS(on) = 2.2 W  
P−Channel  
Features  
3
Low R  
Provides Higher Efficiency and Extends Battery Life  
DS(on)  
Miniature SC−70/SOT−323 Surface Mount Package Saves Board Space  
Pb−Free Package is Available  
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain−to−Source Voltage  
Gate−to−Source Voltage − Continuous  
Drain Current  
Symbol  
V
Value  
20  
Unit  
Vdc  
2
DSS  
V
20  
Vdc  
GS  
MARKING DIAGRAM  
AND PIN ASSIGNMENT  
mAdc  
− Continuous @ T = 25°C  
I
I
300  
240  
750  
3
A
D
D
Drain  
3
− Continuous @ T = 70°C  
A
− Pulsed Drain Current (t 10 ms)  
I
p
DM  
Total Power Dissipation  
P
D
1
@ T = 25°C (Note 1)  
150  
1.2  
mW  
mW/°C  
A
2
P3 M G  
SC−70/SOT−323  
CASE 419  
Derate above 25°C  
G
Operating and Storage  
Temperature Range  
T , T  
− 55 to 150  
°C  
STYLE 8  
J
stg  
Gate  
1
2 Source  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
833  
260  
°C/W  
°C  
Maximum Lead Temperature for Soldering  
Purposes, for 10 seconds  
T
L
P3  
M
G
= Specific Device Code  
= Date Code*  
= Pb−Free Package  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
1. Mounted on G10/FR4 glass epoxy board using minimum recommended  
footprint.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBF2202PT1  
SC−70/  
3000 Tape & Reel  
SOT−323  
MMBF2202PT1G  
SC−70/  
SOT−323  
(Pb−Free)  
3000 Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 5  
MMBF2202PT1/D  
 

MMBF2202PT1G 替代型号

型号 品牌 替代类型 描述 数据表
NTS4101PT1G ONSEMI

类似代替

Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70
NTS4101PT1 ONSEMI

类似代替

Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70
MMBF2202PT1 ONSEMI

类似代替

Power MOSFET 300 mAmps, 20 Volts P−Channel SC−70/SOT−323

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