5秒后页面跳转
MMBF4118 PDF预览

MMBF4118

更新时间: 2024-01-29 22:26:42
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关小信号场效应晶体管光电二极管输入元件放大器
页数 文件大小 规格书
12页 536K
描述
N-Channel Switch

MMBF4118 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.27
Samacsys Confidence:4Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/1241331.1.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=1241331
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=12413313D View:https://componentsearchengine.com/viewer/3D.php?partID=1241331
Samacsys PartID:1241331Samacsys Image:https://componentsearchengine.com/Images/9/MMBF4118.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/MMBF4118.jpgSamacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08 ISSUE ASSamacsys Released Date:2018-05-21 08:50:42
Is Samacsys:N配置:SINGLE
FET 技术:JUNCTION最大反馈电容 (Crss):1.5 pF
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MMBF4118 数据手册

 浏览型号MMBF4118的Datasheet PDF文件第2页浏览型号MMBF4118的Datasheet PDF文件第3页浏览型号MMBF4118的Datasheet PDF文件第4页浏览型号MMBF4118的Datasheet PDF文件第5页浏览型号MMBF4118的Datasheet PDF文件第6页浏览型号MMBF4118的Datasheet PDF文件第7页 
Discr ete P OWER & Sign a l  
Tech n ologies  
MMBF4117  
MMBF4118  
MMBF4119  
PN4117  
PN4118  
PN4119  
G
D
TO-92  
G
S
SOT-23  
Mark: 61A / 61C / 61E  
S
D
N-Channel Switch  
This device is designed for low current DC and audio applications.  
These devices provide excellent performance as input stages for  
sub-picoamp instrumentation or any high impedance signal  
sources. Sourced from Process 53.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
40  
- 40  
V
V
VGS  
Gate-Source Voltage  
IGF  
Forward Gate Current  
50  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ ,Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN4117  
*MMBF4117  
PD  
Total Device Dissipation  
Derate above 25 C  
350  
2.8  
225  
1.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
125  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
357  
556  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
ã1997 Fairchild Semiconductor Corporation  

与MMBF4118相关器件

型号 品牌 描述 获取价格 数据表
MMBF4118D87Z FAIRCHILD Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET

获取价格

MMBF4118D87Z TI N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB

获取价格

MMBF4118L99Z TI N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB

获取价格

MMBF4118S62Z FAIRCHILD Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET

获取价格

MMBF4119 FAIRCHILD N-Channel Switch

获取价格

MMBF4119 TI N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB

获取价格