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MMBF4391LT1G PDF预览

MMBF4391LT1G

更新时间: 2024-01-18 18:47:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关小信号场效应晶体管光电二极管PC
页数 文件大小 规格书
6页 94K
描述
JFET Switching Transistors

MMBF4391LT1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.59Samacsys Confidence:3
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/225748.1.1.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=225748PCB Footprint:https://componentsearchengine.com/footprint.php?partID=225748
3D View:https://componentsearchengine.com/viewer/3D.php?partID=225748Samacsys PartID:225748
Samacsys Image:https://componentsearchengine.com/Images/9/MMBF4391LT1G.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/MMBF4391LT1G.jpg
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08
Samacsys Released Date:2015-08-13 08:15:47Is Samacsys:N
配置:SINGLE最小漏源击穿电压:30 V
最大漏源导通电阻:30 ΩFET 技术:JUNCTION
最大反馈电容 (Crss):3.5 pFJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MMBF4391LT1G 数据手册

 浏览型号MMBF4391LT1G的Datasheet PDF文件第2页浏览型号MMBF4391LT1G的Datasheet PDF文件第3页浏览型号MMBF4391LT1G的Datasheet PDF文件第4页浏览型号MMBF4391LT1G的Datasheet PDF文件第5页浏览型号MMBF4391LT1G的Datasheet PDF文件第6页 
MMBF4391LT1,  
MMBF4392LT1,  
MMBF4393LT1  
JFET Switching Transistors  
N−Channel  
http://onsemi.com  
Features  
2 SOURCE  
Pb−Free Packages are Available  
3
GATE  
MAXIMUM RATINGS  
Rating  
Drain−Source Voltage  
Symbol  
Value  
30  
Unit  
Vdc  
1 DRAIN  
V
DS  
DG  
GS  
Drain−Gate Voltage  
V
V
30  
Vdc  
Gate−Source Voltage  
30  
Vdc  
MARKING  
DIAGRAM  
Forward Gate Current  
I
50  
mAdc  
G(f)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
3
SOT−23  
Total Device Dissipation FR5 Board  
P
mW  
xx M  
CASE 318  
STYLE 10  
D
1
(Note 1) T = 25°C  
225  
1.8  
A
2
Derate above 25°C  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
556  
q
JA  
xx  
M
= Specific Device Code  
= Date Code  
Junction and Storage Temperature  
T , T  
55 to +150  
°C  
J
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
1. FR5 = 1.0 0.75 0.062 in.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
section on page 2 of this data sheet.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
September, 2004 − Rev. 4  
MMBF4391LT1/D  
 

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