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MMBF4393_NL

更新时间: 2024-11-25 13:11:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管光电二极管
页数 文件大小 规格书
2页 46K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET,

MMBF4393_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.1
配置:SINGLE最大漏源导通电阻:100 Ω
FET 技术:JUNCTION最大反馈电容 (Crss):3.5 pF
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MMBF4393_NL 数据手册

 浏览型号MMBF4393_NL的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
MMBF4391  
MMBF4392  
MMBF4393  
PN4391  
PN4392  
PN4393  
G
D
TO-92  
G
S
S
SOT-23  
Mark: 6J / 6K / 6G  
D
N-Channel Switch  
This device is designed for low level analog switching, sample  
and hold circuits and chopper stabalized amplifiers. Sourced  
from Process 51. See J111 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
30  
- 30  
V
V
VGS  
IGF  
50  
mA  
°C  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ ,Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN4391  
*MMBF4391  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
225  
1.8  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

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