Datasheet > 晶体管 > 小信号场效应晶体管> MMBF4391-S00Z

MMBF4391-S00Z

更新时间： 2024-09-22 08:20:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		小信号场效应晶体管
页数	文件大小	规格书
10页	473K
描述
Transistor

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中文翻译

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数据手册

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MMBF4391-S00Z 数据手册

MMBF4391

MMBF4392

MMBF4393

PN4391

PN4392

PN4393

TO-92

SOT-23

Mark: 6J / 6K / 6G

NOTE: Source & Drain

are interchangeable

N-Channel Switch

This device is designed for low level analog switching, sample

and hold circuits and chopper stabalized amplifiers. Sourced

from Process 51. See J111 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_DG

Drain-Gate Voltage

- 30

V_GS

Gate-Source Voltage

I_GF

Forward Gate Current

Operating and Storage Junction Temperature Range

-55 to +150

T_J,T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

PN4391-4393

*MMBF4391-4393

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

625

5.0

125

350

2.8

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

357

556

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7...10

中文翻译

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