MMBF4392L

更新时间： 2024-02-25 15:12:38

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体开关小信号场效应晶体管光电二极管
页数	文件大小	规格书
6页	143K
描述
JFET Switching Transistors

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技术参数
数据手册

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MMBF4392L 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.64	Is Samacsys：	N
FET 技术：	JUNCTION	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.225 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

MMBF4392L 数据手册

Order this document

by MMBF4391LT1/D

SEMICONDUCTOR TECHNICAL DATA

N–Channel

2 SOURCE

GATE

1 DRAIN

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Symbol

Value

Unit

Vdc

CASE 318–08, STYLE 10

SOT–23 (TO–236AB)

Drain–Gate Voltage

Vdc

Gate–Source Voltage

Vdc

Forward Gate Current

mAdc

G(f)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

225

= 25°C

Derate above 25°C

1.8

556

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

T , T

J stg

–55 to +150

MMBF4391LT1 = 6J; MMBF4392LT1 = 6K; MMBF4393LT1 = 6G

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Gate–Source Breakdown Voltage

—

Vdc

(BR)GSS

(I = 1.0 µAdc, V

= 0)

Gate Reverse Current

GSS

= 15 Vdc, V

= 0, T = 25°C)

—

1.0

0.20

nAdc

µAdc

= 0, T = 100°C)

Gate–Source Cutoff Voltage

(V = 15 Vdc, I = 10 nAdc)

Vdc

GS(off)

MMBF4391LT1

MMBF4392LT1

MMBF4393LT1

–4.0

–2.0

–0.5

–10

–5.0

–3.0

Off–State Drain Current

D(off)

= 15 Vdc, V

= –12 Vdc)

= –12 Vdc, T = 100°C)

—

1.0

nAdc

µAdc

1. FR–5 = 1.0

0.75 0.062 in.

Thermal Clad is a trademark of the Bergquist Company

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1997

12 3 4 5 6

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