Datasheet > MMBF4416_09

MMBF4416_09

更新时间： 2024-01-02 04:21:12

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		射频放大器
页数	文件大小	规格书
4页	106K
描述
N-Channel RF Amplifiers

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MMBF4416_09 数据手册

April 2009

MMBF4416

N-Channel RF Amplifiers

•

This device is designed for RF amplifiers.

Sourced from process 50.

SOT-23

Mark: 6A

Absolute Maximum Ratings T =25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_DG

V_GS

I_GF

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

-30

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to +150

Electrical Characteristics T =25°C unless otherwise noted

Symbol

Parameter

Test Condition

Min. Typ. Max. Units

Off Characteristics

V_(BR)GSS

I_GSS

Gate-Source Breakdown Voltage V_DS= 0, I_G= 1μA

-30

Gate Reverse Current

V_GS= -20V, V_DS= 0

_GS= -20V, V_DS= 0, T_A= 150°C

-1

-200

_GS(off)

Gate Source Cut-off Voltage

Gate Source Voltage

V_DS= 15V, I_D= 1nA

-2.5

-1

-6

V_GS

V_DS= 15V, I_D= 0.5mA

-5.5

On Characteristics

I_DSSZero-Gate Voltage Drain Current V_GS= 15V, V_GS= 0

_GS(f)

Gate-Source Forward Voltage

V_DS= 0, I_G= 1mA

Small Signal Characteristics

lY_fsl

ly_osl

C_iss

C_rss

C_oss

Forward Transfer Admittance

V_DS= 15V, V_GS= 0, f = 1KHz

V_DS= 15V, V_GS= 0, f = 1MHz

4500

7500 μmhos

Output Admittance

μmhos

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

0.9

Functional Characteristics

Noise Figure

V_DS= 15V, I_D= 5mA, R_g= 100Ω, f = 100MHz

G_ps

Common Source Power Gain

MMBF4416 Rev. B2

www.fairchildsemi.com

12 3 4

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