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MMBF4416LT1G PDF预览

MMBF4416LT1G

更新时间: 2024-11-25 04:14:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号场效应晶体管射频小信号场效应晶体管光电二极管
页数 文件大小 规格书
6页 149K
描述
JFET VHF/UHF Amplifier Transistor N-Channel

MMBF4416LT1G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:SOT-23包装说明:CASE 318-08, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.19
配置:SINGLE最小漏源击穿电压:30 V
FET 技术:JUNCTION最大反馈电容 (Crss):0.8 pF
最高频带:ULTRA HIGH FREQUENCY BANDJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.225 W最小功率增益 (Gp):10 dB
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MMBF4416LT1G 数据手册

 浏览型号MMBF4416LT1G的Datasheet PDF文件第2页浏览型号MMBF4416LT1G的Datasheet PDF文件第3页浏览型号MMBF4416LT1G的Datasheet PDF文件第4页浏览型号MMBF4416LT1G的Datasheet PDF文件第5页浏览型号MMBF4416LT1G的Datasheet PDF文件第6页 
MMBF4416LT1  
Preferred Device  
JFET VHF/UHF Amplifier  
Transistor  
N−Channel  
http://onsemi.com  
Features  
Pb−Free Package is Available  
2 SOURCE  
MAXIMUM RATINGS  
3
Rating  
Drain−Source Voltage  
Symbol  
Value  
Unit  
GATE  
V
30  
Vdc  
DS  
DG  
GS  
Drain−Gate Voltage  
Gate−Source Voltage  
Gate Current  
V
V
30  
30  
10  
Vdc  
Vdc  
1 DRAIN  
I
mAdc  
G
THERMAL CHARACTERISTICS  
3
SOT−23 (TO−236)  
CASE 318  
Characteristic  
Symbol  
Max  
Unit  
1
Total Device Dissipation FR−5 Board,  
(Note 1) T = 25°C  
Derate above 25°C  
P
STYLE 10  
D
2
225  
1.8  
mW  
mW/°C  
A
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
556  
°C/W  
°C  
q
JA  
T , T  
J
−55 to +150  
stg  
MARKING DIAGRAM  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
M6A M G  
1. FR−5 = 1.0 x 0.75 x 0.062 in.  
G
1
M6A = Device Code  
M
= Date Code*  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBF4416LT1  
SOT−23 3,000 / Tape & Reel  
MMBF4416LT1G SOT−23 3,000 / Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 3  
MMBF4416LT1/D  
 

MMBF4416LT1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBF4416 ONSEMI

完全替代

N沟道RF放大器
MMBF4416LT1 ONSEMI

完全替代

JFET VHF/UHF Amplifier Transistor
MMBF5485 ONSEMI

类似代替

N 沟道 RF 晶体管

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