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MMBF4416A PDF预览

MMBF4416A

更新时间: 2024-02-15 08:06:25
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体射频放大器小信号场效应晶体管射频小信号场效应晶体管光电二极管
页数 文件大小 规格书
3页 47K
描述
N-Channel RF Amplifier

MMBF4416A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
风险等级:5.77配置:SINGLE
最小漏源击穿电压:30 VFET 技术:JUNCTION
最大反馈电容 (Crss):0.8 pF最高频带:ULTRA HIGH FREQUENCY BAND
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:0.225 W最大功率耗散 (Abs):0.225 W
最小功率增益 (Gp):10 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MMBF4416A 数据手册

 浏览型号MMBF4416A的Datasheet PDF文件第2页浏览型号MMBF4416A的Datasheet PDF文件第3页 
MMBF4416A  
N-Channel RF Amplifier  
G
This device is designed for RF amplifiers.  
Sourced from process 50.  
S
SOT-23  
D
Mark: 6BG  
Absolute Maximum Ratings * T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Value  
Units  
V
V
V
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
35  
-35  
DG  
GS  
V
I
10  
mA  
°C  
GF  
T , T  
Operating and Storage Junction Temperature Range  
- 55 ~ 150  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
Off Characteristics  
V
Gate-Source Breakdown Voltage  
Gate Reverse Current  
V
V
V
V
= 0, I = 1.0µA  
-35  
V
pA  
V
(BR)GSS  
GSS  
DS  
GS  
DS  
DS  
G
I
= -20V, V = 0  
-100  
-6.0  
-5.5  
DS  
V
V
(off)  
Gate Source Cut-off Voltage  
Gate Source Voltage  
= 15V, I = 1.0nA  
-2.5  
-1  
GS  
GS  
D
= 15V, I = 500µA  
V
D
On Characteristics  
I
Zero-Gate Voltage Drain Current  
Gate-Source Forward Voltage  
V
V
= 15V, V = 0  
5
15  
1
µA  
DSS  
GS  
DS  
GS  
V
(f)  
= 0, I = 1.0mA  
V
GS  
G
Small Signal Characteristics  
g
g
Forward Transfer Conductance *  
Output Conductance *  
Input Capacitance  
V
V
V
V
V
V
= 15V, V = 0, f = 1.0kHz  
4500  
7500 µmhos  
fs  
DS  
DS  
DS  
DS  
DS  
DS  
GS  
= 15V, V = 0, f = 1.0kHz  
50  
4.0  
0.8  
2.0  
4.0  
µmhos  
PF  
os  
GS  
C
= 15V, V = 0, f = 1.0MHz  
GS  
iss  
Crss  
Reverse Transfer Capacitance  
Output Capacitance  
= 15V, V = 0, f = 1.0MHz  
PF  
GS  
C
= 15V, V = 0, f = 1.0MHz  
PF  
oss  
GS  
NF  
Noise Figure  
= 15V, V = 0, I = 5mA,  
dB  
GS  
D
R = 1k, f = 400MHz  
g
* Pulse Test: Pulse Width 300ms, Duty Cycle 2%  
Thermal Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Max.  
Units  
P
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
225  
1.8  
mW  
mW/°C  
D
R
556  
°C/W  
θJA  
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.  
©2002 Fairchild Semiconductor Corporation  
Rev. A1, November 2002  

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