MMBF4392L

更新时间： 2024-02-05 18:03:39

品牌	Logo	应用领域
安森美 - ONSEMI		晶体开关晶体管光电二极管
页数	文件大小	规格书
6页	94K
描述
JFET Switching Transistors

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中文翻译

获取价格

技术参数
数据手册
替代型号

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MMBF4392L 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.64	Is Samacsys：	N
FET 技术：	JUNCTION	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.225 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

MMBF4392L 数据手册

MMBF4391LT1,

MMBF4392LT1,

MMBF4393LT1

JFET Switching Transistors

N−Channel

http://onsemi.com

Features

2 SOURCE

• Pb−Free Packages are Available

GATE

MAXIMUM RATINGS

Rating

Drain−Source Voltage

Symbol

Value

Unit

Vdc

1 DRAIN

Drain−Gate Voltage

Vdc

Gate−Source Voltage

Vdc

MARKING

DIAGRAM

Forward Gate Current

mAdc

G(f)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

SOT−23

Total Device Dissipation FR−5 Board

xx M

CASE 318

STYLE 10

(Note 1) T = 25°C

225

1.8

Derate above 25°C

mW/°C

°C/W

Thermal Resistance,

Junction−to−Ambient

556

= Specific Device Code

= Date Code

Junction and Storage Temperature

T , T

−55 to +150

°C

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

DEVICE MARKING INFORMATION

See specific marking information in the device marking

section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

September, 2004 − Rev. 4

MMBF4391LT1/D

12 3 4 5 6

中文翻译

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MMBF4392L 替代型号

型号	品牌	替代类型	描述	数据表
MMBF4392LT1	MOTOROLA	功能相似	JFET Switching Transistors

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