Datasheet > MMBF4391LT1G_12

MMBF4391LT1G_12

更新时间： 2022-03-31 00:04:05

品牌	Logo	应用领域
安森美 - ONSEMI		晶体开关晶体管
页数	文件大小	规格书
6页	134K
描述
JFET Switching Transistors

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MMBF4391LT1G_12 数据手册

MMBF4391LT1G,

SMMBF4391LT1G,

MMBF4392LT1G,

MMBF4393LT1G

JFET Switching Transistors

http://onsemi.com

N−Channel

Features

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

SOT−23

CASE 318

STYLE 10

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

2 SOURCE

MAXIMUM RATINGS

GATE

Rating

Drain−Source Voltage

Symbol

Value

Unit

Vdc

Drain−Gate Voltage

Vdc

1 DRAIN

Gate−Source Voltage

Vdc

MARKING DIAGRAM

Forward Gate Current

mAdc

G(f)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

XXX M G

Total Device Dissipation FR−5 Board

(Note 1) T = 25°C

225

1.8

mW/°C

Derate above 25°C

XXX = Specific Device Code

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature Range

556

°C/W

°C

= Date Code*

T , T

−55 to +150

stg

= Pb−Free Package

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

MARKING & ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 2 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

May, 2012 − Rev. 10

MMBF4391LT1/D

12 3 4 5 6

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