Datasheet > MMBF4119S62Z

MMBF4119S62Z

更新时间： 2024-02-07 18:23:25

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关光电二极管晶体管
页数	文件大小	规格书
5页	129K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET

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技术参数
数据手册

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MMBF4119S62Z 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	风险等级：	5.66
配置：	SINGLE	FET 技术：	JUNCTION
最大反馈电容 (Crss)：	1.5 pF	JEDEC-95代码：	TO-236AB
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	工作模式：	DEPLETION MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

MMBF4119S62Z 数据手册

MMBF4117

MMBF4118

MMBF4119

PN4117

PN4118

PN4119

TO-92

SOT-23

Mark: 61A / 61C / 61E

NOTE: Source & Drain

are interchangeable

N-Channel Switch

This device is designed for low current DC and audio applications.

These devices provide excellent performance as input stages for

sub-picoamp instrumentation or any high impedance signal

sources. Sourced from Process 53.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_DG

Drain-Gate Voltage

- 40

V_GS

Gate-Source Voltage

I_GF

Forward Gate Current

Operating and Storage Junction Temperature Range

-55 to +150

T_J,T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

PN4117-4119

*MMBF4117-4119

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

350

2.8

125

225

1.8

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

357

556

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

12 3 4 5

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