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MMBF4119 PDF预览

MMBF4119

更新时间: 2024-11-24 22:46:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关小信号场效应晶体管光电二极管PC
页数 文件大小 规格书
12页 536K
描述
N-Channel Switch

MMBF4119 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.23
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:1288822Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT?23 CASE 318BM ISSUE OSamacsys Released Date:2018-06-21 06:30:01
Is Samacsys:N配置:SINGLE
FET 技术:JUNCTION最大反馈电容 (Crss):1.5 pF
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MMBF4119 数据手册

 浏览型号MMBF4119的Datasheet PDF文件第2页浏览型号MMBF4119的Datasheet PDF文件第3页浏览型号MMBF4119的Datasheet PDF文件第4页浏览型号MMBF4119的Datasheet PDF文件第5页浏览型号MMBF4119的Datasheet PDF文件第6页浏览型号MMBF4119的Datasheet PDF文件第7页 
Discr ete P OWER & Sign a l  
Tech n ologies  
MMBF4117  
MMBF4118  
MMBF4119  
PN4117  
PN4118  
PN4119  
G
D
TO-92  
G
S
SOT-23  
Mark: 61A / 61C / 61E  
S
D
N-Channel Switch  
This device is designed for low current DC and audio applications.  
These devices provide excellent performance as input stages for  
sub-picoamp instrumentation or any high impedance signal  
sources. Sourced from Process 53.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
40  
- 40  
V
V
VGS  
Gate-Source Voltage  
IGF  
Forward Gate Current  
50  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ ,Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN4117  
*MMBF4117  
PD  
Total Device Dissipation  
Derate above 25 C  
350  
2.8  
225  
1.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
125  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
357  
556  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
ã1997 Fairchild Semiconductor Corporation  

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