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MMBF2202PT3 PDF预览

MMBF2202PT3

更新时间: 2024-11-24 22:46:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管场效应晶体管
页数 文件大小 规格书
6页 135K
描述
LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS

MMBF2202PT3 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.75
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):0.3 A最大漏源导通电阻:2.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
功耗环境最大值:0.15 W认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MMBF2202PT3 数据手册

 浏览型号MMBF2202PT3的Datasheet PDF文件第2页浏览型号MMBF2202PT3的Datasheet PDF文件第3页浏览型号MMBF2202PT3的Datasheet PDF文件第4页浏览型号MMBF2202PT3的Datasheet PDF文件第5页浏览型号MMBF2202PT3的Datasheet PDF文件第6页 
Order this document  
by MMBF2202PT1/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
P–CHANNEL  
ENHANCEMENT–MODE  
TMOS MOSFET  
Part of the GreenLine Portfolio of devices with energy–con-  
serving traits.  
r
= 2.2 OHM  
DS(on)  
These miniature surface mount MOSFETs utilize Motorola’s  
High Cell Density, HDTMOS process. Low r  
assures  
3 DRAIN  
DS(on)  
minimal power loss and conserves energy, making this device  
ideal for use in small power management circuitry. Typical  
applications are dc–dc converters, power management in  
portable and battery–powered products such as computers,  
printers, PCMCIA cards, cellular and cordless telephones.  
3
1
2
1
CASE 419–02, STYLE 8  
SC–70/SOT–323  
GATE  
Low r Provides Higher Efficiency and Extends Battery  
DS(on)  
Life  
2 SOURCE  
Miniature SC–70/SOT–323 Surface Mount Package Saves  
Board Space  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain–to–Source Voltage  
Symbol  
V
Value  
20  
Unit  
Vdc  
DSS  
Gate–to–Source Voltage — Continuous  
V
GS  
± 20  
Vdc  
Drain Current — Continuous @ T = 25°C  
I
I
300  
240  
750  
mAdc  
A
D
D
Drain Current — Continuous @ T = 70°C  
A
Drain Current — Pulsed Drain Current (t 10 µs)  
I
p
DM  
(1)  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
150  
1.2  
mW  
mW/°C  
A
Operating and Storage Temperature Range  
Thermal Resistance — Junction–to–Ambient  
Maximum Lead Temperature for Soldering Purposes, for 10 seconds  
DEVICE MARKING  
T , T  
– 55 to 150  
833  
°C  
°C/W  
°C  
J
stg  
R
θJA  
T
L
260  
P3  
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.  
ORDERING INFORMATION  
Device  
Reel Size  
Tape Width  
Quantity  
3000  
MMBF2202PT1  
MMBF2202PT3  
7″  
8 mm embossed tape  
8 mm embossed tape  
13″  
10,000  
GreenLine is a trademark of Motorola, Inc.  
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a registered trademark of the Berquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1998

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