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MMBF4117 PDF预览

MMBF4117

更新时间： 2024-02-17 16:35:14
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
6页 208K
描述
N 沟道开关

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MMBF4117 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SOT-23包装说明：SOT-23, 3 PIN
针数：3Reach Compliance Code：unknown
风险等级：5.28配置：SINGLE
FET 技术：JUNCTION最大反馈电容 (Crss)：1.5 pF
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3工作模式：DEPLETION MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL认证状态：COMMERCIAL
表面贴装：YES端子面层：MATTE TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMBF4117 数据手册

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DATA SHEET  
www.onsemi.com  
Switch, N-Channel  
MMBF4117  
G
S
D
SOT−23 (TO−236)  
CASE 318−08  
Description  
This device is designed for low current DC and audio applications.  
These devices provide excellent performance as input stages  
for sub−picoamp instrumentation or any high impedance signal  
sources. Sourced from process 53.  
Note: Source & Drain are interchangeable.  
MARKING DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Values are at T = 25°C unless otherwise noted.  
61AMG  
A
G
Symbol  
Parameter  
Drain−Gate Voltage  
Value  
40  
Unit  
V
1
V
V
DG  
GS  
GF  
Gate−Source Voltage  
−40  
V
61A  
M
G
= Specific Device Code  
= Date Code  
= Pb*Free Package  
I
Forward Gate Current  
50  
mA  
°C  
T , T  
Operating and Storage  
Temperature Range  
−55 to +150  
J
STG  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. These ratings are based on a maximum junction temperature of 150°C.  
2. These are steady−state limits. onsemi should be consulted on applications  
involving pulsed or low−duty−cycle operations.  
†
Device  
MMBF4117  
Package  
Shipping  
3000 /  
Tape & Reel  
SOT−23 3L  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
THERMAL CHARACTERISTICS  
Values are at T = 25°C unless otherwise noted.  
A
Symbol  
Parameter  
Total Device Dissipation  
Value  
225  
1.8  
Unit  
mW  
P
D
Derate Above 25°C  
mW/°C  
°C/W  
R
Thermal Resistance, Junction−to−Ambient  
556  
q
JA  
3. Device mounted on FR−4 PCB 1.6 inch x 1.6 inch x 0.06 inch.  
ELECTRICAL CHARACTERISTICS Values are at T = 25°C unless otherwise noted.  
A
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
V
Gate−Source Breakdown Voltage  
I
= −1.0 mA, V = 0  
−40  
−
−
V
pA  
nA  
V
(BR)GSS  
G
DS  
I
Gate Reverse Current  
V
V
V
= −20 V, V = 0  
−10  
−25  
−1.8  
GSS  
GS  
GS  
DS  
DS  
= −20 V, V = 0, T = 150°C  
−
DS  
A
V
Gate−Source Cut−Off Voltage  
= −10 V, I = 1.0 nA  
−0.6  
GS(off)  
D
ON CHARACTERISTICS  
Zero−Gate Voltage Drain Current  
SMALL SIGNAL CHARACTERISTICS  
I
V
DS  
= 10 V, V = 0  
30  
90  
mA  
DSS  
GS  
g
Common Source Forward Transconductance  
Common−Source Output Conductance  
Common−Source Forward Transconductance  
Input Capacitance  
V
DS  
V
DS  
V
DS  
V
DS  
V
DS  
= 10 V, V = 0, f = 1.0 kHz  
70  
−
210  
3.0  
−
mmhos  
mmhos  
mmhos  
pF  
fs  
GS  
g
oss  
= 10 V, V = 0, f = 1.0 kHz  
GS  
R
= 10 V, V = 0, f = 30 MHz  
60  
−
e(yfs)  
GS  
C
= 10 V, V = 0, f = 1.0 kHz  
3.0  
1.5  
iss  
rss  
GS  
C
Reverse Transfer Capacitance  
= 10 V, V = 0, f = 1.0 MHz  
−
pF  
GS  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 1.0%.  
1
Publication Order Number:  
© Semiconductor Components Industries, LLC, 1997  
MMBF4117/D  
February 2022 − Rev. 2  
123456

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