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MMBF4117D87Z PDF预览

MMBF4117D87Z

更新时间: 2024-02-04 08:12:02
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 128K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN

MMBF4117D87Z 数据手册

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MMBF4117  
MMBF4118  
MMBF4119  
PN4117  
PN4118  
PN4119  
G
S
TO-92  
G
S
SOT-23  
Mark: 61A / 61C / 61E  
D
D
NOTE: Source & Drain  
are interchangeable  
N-Channel Switch  
This device is designed for low current DC and audio applications.  
These devices provide excellent performance as input stages for  
sub-picoamp instrumentation or any high impedance signal  
sources. Sourced from Process 53.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
40  
- 40  
50  
V
V
VGS  
Gate-Source Voltage  
IGF  
Forward Gate Current  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ ,Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN4117-4119  
*MMBF4117-4119  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
225  
1.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

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