Datasheet > MMBF170LT1G

MMBF170LT1G

更新时间： 2024-11-09 12:49:47

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	200K
描述
N-CHANNEL SOT-23

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中文翻译

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数据手册

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MMBF170LT1G 数据手册

SMD Type

Product specification

MMBF170LT1

Power MOSFET

500 mA, 60 V

N−Channel SOT−23

Features

• Pb−Free Packages are Available

500 mA, 60 V

MAXIMUM RATINGS

Rating

_DS(on)= 5 W

Symbol

Value

Unit

Vdc

Drain−Source Voltage

Drain−Gate Voltage

DSS

DGS

N−Channel

Gate−Source Voltage

− Continuous

GSM

±20

±40

Vdc

Vpk

− Non−repetitive (t ≤ 50 ms)

Drain Current − Continuous

− Pulsed

0.5

0.8

Adc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

(Note 1.) T = 25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

556

°C/W

°C

SOT−23

CASE 318

STYLE 21

T , T

−55 to

+150

stg

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

MARKING DIAGRAM

= Device Code

= Work Week

PIN ASSIGNMENT

Drain

Gate 1

2 Source

ORDERING INFORMATION

See detailed ordering and shipping information in the

package dimensions section on page 2 of this data sheet.

http://www.twtysemi.com

sales@twtysemi.com

1of 2

4008-318-123

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