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MMBF2201NT1G PDF预览

MMBF2201NT1G

更新时间: 2024-11-27 04:14:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 57K
描述
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323

MMBF2201NT1G 技术参数

是否无铅: 不含铅生命周期:Not Recommended
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:6.98
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):0.3 A最大漏极电流 (ID):0.3 A
最大漏源导通电阻:1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MMBF2201NT1G 数据手册

 浏览型号MMBF2201NT1G的Datasheet PDF文件第2页浏览型号MMBF2201NT1G的Datasheet PDF文件第3页浏览型号MMBF2201NT1G的Datasheet PDF文件第4页 
MMBF2201NT1  
Preferred Device  
Power MOSFET  
300 mAmps, 20 Volts  
N−Channel SC−70/SOT−323  
These miniature surface mount MOSFETs low R  
assure  
DS(on)  
http://onsemi.com  
minimal power loss and conserve energy, making these devices ideal  
for use in small power management circuitry. Typical applications are  
dc−dc converters, power management in portable and  
battery−powered products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
300 mAMPS, 20 VOLTS  
RDS(on) = 1 W  
N−Channel  
Features  
3
Low R  
Provides Higher Efficiency and Extends Battery Life  
DS(on)  
Miniature SC−70/SOT−323 Surface Mount Package Saves  
Board Space  
Pb−Free Package is Available  
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
V
Value  
Unit  
2
Drain−to−Source Voltage  
20  
Vdc  
DSS  
MARKING DIAGRAM  
Gate−to−Source Voltage − Continuous  
V
20  
Vdc  
GS  
AND PIN ASSIGNMENT  
Drain Current  
mAdc  
3
− Continuous @ T = 25°C  
I
I
300  
240  
750  
A
A
D
D
3
− Continuous @ T = 70°C  
Drain  
− Pulsed Drain Current (t 10 ms)  
I
p
DM  
1
2
SC−70/SOT−323  
Total Power Dissipation @ T = 25°C  
(Note 1)  
P
D
A
N1 M G  
150  
1.2  
mW  
mW/°C  
CASE 419  
STYLE 8  
G
Derate above 25°C  
Operating and Storage Temperature Range T , T  
− 55 to 150  
833  
°C  
°C/W  
°C  
J
stg  
1
2
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
Gate Source  
Maximum Lead Temperature for Soldering  
Purposes, for 10 seconds  
T
260  
L
N1 = Device Code  
M
G
= Date Code*  
= Pb−Free Package  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Mounted on G10/FR4 glass epoxy board using minimum recommended  
footprint.  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBF2201NT1  
SC−70/  
3000 Tape & Reel  
SOT−323  
MMBF2201NT1G  
SC−70/  
SOT−323  
(Pb−Free)  
3000 Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 4  
MMBF2201NT1/D  
 

MMBF2201NT1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBF2201NT1 ONSEMI

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