Datasheet > MMBF2201NT1_06

MMBF2201NT1_06

更新时间： 2024-02-07 11:23:45

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	57K
描述
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323

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中文翻译

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MMBF2201NT1_06 数据手册

MMBF2201NT1

Preferred Device

Power MOSFET

300 mAmps, 20 Volts

N−Channel SC−70/SOT−323

These miniature surface mount MOSFETs low R

assure

DS(on)

http://onsemi.com

minimal power loss and conserve energy, making these devices ideal

for use in small power management circuitry. Typical applications are

dc−dc converters, power management in portable and

battery−powered products such as computers, printers, PCMCIA

cards, cellular and cordless telephones.

300 mAMPS, 20 VOLTS

R_DS(on)= 1 W

N−Channel

Features

• Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Miniature SC−70/SOT−323 Surface Mount Package Saves

Board Space

• Pb−Free Package is Available

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

Vdc

DSS

MARKING DIAGRAM

Gate−to−Source Voltage − Continuous

Vdc

AND PIN ASSIGNMENT

Drain Current

mAdc

− Continuous @ T = 25°C

300

240

750

− Continuous @ T = 70°C

Drain

− Pulsed Drain Current (t ≤ 10 ms)

SC−70/SOT−323

Total Power Dissipation @ T = 25°C

(Note 1)

N1 M G

150

1.2

mW/°C

CASE 419

STYLE 8

Derate above 25°C

Operating and Storage Temperature Range T , T

− 55 to 150

833

°C

°C/W

°C

stg

Thermal Resistance, Junction−to−Ambient

Gate Source

Maximum Lead Temperature for Soldering

Purposes, for 10 seconds

260

N1 = Device Code

= Date Code*

= Pb−Free Package

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Mounted on G10/FR4 glass epoxy board using minimum recommended

footprint.

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBF2201NT1

SC−70/

3000 Tape & Reel

SOT−323

MMBF2201NT1G

SC−70/

SOT−323

(Pb−Free)

3000 Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 4

MMBF2201NT1/D

12 3 4

中文翻译

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与MMBF2201NT1_06相关器件

型号	品牌	获取价格	描述	数据表
MMBF2201NT1G	ONSEMI	获取价格	Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
MMBF2201PT1	MOTOROLA	获取价格	LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
MMBF2202PT1	MOTOROLA	获取价格	P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MMBF2202PT1	ONSEMI	获取价格	Power MOSFET 300 mAmps, 20 Volts P−Channel SC−70/SOT−323
MMBF2202PT1_06	ONSEMI	获取价格	Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
MMBF2202PT1G	ONSEMI	获取价格	Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
MMBF2202PT3	MOTOROLA	获取价格	LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
MMBF4091	FAIRCHILD	获取价格	N-Channel Switch
MMBF4091	ONSEMI	获取价格	N 沟道开关
MMBF4091D87Z	TI	获取价格	N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB

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